Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells

Y. Vygranenko; M. Fernandes; P. Louro; M. Vieira; A. Sazonov

doi:10.1016/j.egypro.2015.12.295

Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells

Y. Vygranenko, M. Fernandes, P. Louro, M. Vieira, A. Sazonov

Research output: Contribution to journal › Conference article › peer-review

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Abstract

This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.

Original language	English
Pages (from-to)	56-61
Number of pages	6
Journal	Energy Procedia
Volume	84
DOIs	https://doi.org/10.1016/j.egypro.2015.12.295
Publication status	Published - 1 Jan 2015
Event	E-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015 - Lille, France Duration: 11 May 2015 → 15 May 2015

Keywords

amorhous silicon-carbon alloy
density of states
thin-film solar cells

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10.1016/j.egypro.2015.12.295

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title = "Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells",

abstract = "This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.",

keywords = "amorhous silicon-carbon alloy, density of states, thin-film solar cells",

author = "Y. Vygranenko and M. Fernandes and P. Louro and M. Vieira and A. Sazonov",

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doi = "10.1016/j.egypro.2015.12.295",

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T1 - Preparation and Characterization of a-SiC

T2 - E-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015

AU - Vygranenko, Y.

AU - Fernandes, M.

AU - Louro, P.

AU - Vieira, M.

AU - Sazonov, A.

N1 - sem pdf conforme despacho.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.

AB - This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.

KW - amorhous silicon-carbon alloy

KW - density of states

KW - thin-film solar cells

UR - http://www.scopus.com/inward/record.url?scp=84964026781&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2015.12.295

DO - 10.1016/j.egypro.2015.12.295

M3 - Conference article

AN - SCOPUS:84964026781

VL - 84

SP - 56

EP - 61

JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

Y2 - 11 May 2015 through 15 May 2015

ER -

Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells

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Keywords

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