Abstract
This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.
Original language | English |
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Pages (from-to) | 56-61 |
Number of pages | 6 |
Journal | Energy Procedia |
Volume | 84 |
DOIs | |
Publication status | Published - 1 Jan 2015 |
Event | E-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015 - Lille, France Duration: 11 May 2015 → 15 May 2015 |
Keywords
- amorhous silicon-carbon alloy
- density of states
- thin-film solar cells