Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells

Y. Vygranenko, M. Fernandes, P. Louro, M. Vieira, A. Sazonov

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.

Original languageEnglish
Pages (from-to)56-61
Number of pages6
JournalEnergy Procedia
Volume84
DOIs
Publication statusPublished - 1 Jan 2015
EventE-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015 - Lille, France
Duration: 11 May 201515 May 2015

Keywords

  • amorhous silicon-carbon alloy
  • density of states
  • thin-film solar cells

Fingerprint

Dive into the research topics of 'Preparation and Characterization of a-SiC: H Absorber Layer for Semi-transparent Solar Cells'. Together they form a unique fingerprint.

Cite this