TY - JOUR
T1 - Polymorphous silicon films deposited at 27.12 MHz
AU - Martins, Rodrigo
AU - Águas, Hugo
AU - Ferreira, Isabel
AU - Fortunato, Elvira
AU - Lebib, Sarra
AU - Roca I Cabarrocas, Pere
AU - Guimarães, Leopoldo
PY - 2003/12/1
Y1 - 2003/12/1
N2 - This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.
AB - This paper describes, for the first time, a method of producing polymorphous silicon (pm-Si:H) films by plasma-enhanced (PE) CVD, using an excitation frequency of 27.12 MHz. The aim is to produce, at high growth rates, nanostructured films that are more stable than the conventional amorphous or polymorphous silicon films grown by PECVD at 13.56 MHz. The processing data show that, at 27.12 MHz, the pm-Si:H films are produced close to the transition region from amorphous to microcrystalline silicon films, at a growth rate of about 0.3 nms-1, using pressures above 160 Pa. Apart from that, the analysis of the exodiffusion, spectroscopic ellipsometry (SE), and micro Raman data reveal that these films are more dense and compact than the polymorphous films grown at 13.56 MHz.
KW - Nanostructured semiconductors
KW - PECVD
KW - Plasma process control
KW - Polymorphous silicon
UR - http://www.scopus.com/inward/record.url?scp=10644291047&partnerID=8YFLogxK
U2 - 10.1002/cvde.200306261
DO - 10.1002/cvde.200306261
M3 - Article
SN - 0948-1907
VL - 9
SP - 333
EP - 337
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 6
ER -