Polymorphous silicon deposited in large area reactor at 13 and 27 MHz

H. Águas, P. Roca i Cabarrocas, S. Lebib, V. Silva, E. Fortunato, R. Martins

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 × 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalThin Solid Films
Volume427
Issue number1-2
DOIs
Publication statusPublished - 3 Mar 2003
Event4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

Keywords

  • Amorphous silicon
  • Plasma diagnostics
  • Polymorphous
  • Semiconductors

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