TY - JOUR
T1 - Polymorphous silicon deposited in large area reactor at 13 and 27 MHz
AU - Águas, H.
AU - Roca i Cabarrocas, P.
AU - Lebib, S.
AU - Silva, V.
AU - Fortunato, E.
AU - Martins, R.
N1 - This work was performed in the frame of the European project titled ‘Development of new production techniques for highly efficient polymorphous solar cells- H-Alpha Solar’ (Brite-EuRam, NNE5-1999-00133). Apart from that, the Portuguese authors would like to thank the financial support given by ‘Fundação para a Ciência e Tecnologia’ through pluriannual contract. One of the authors, Hugo Águas thanks also ‘Fundação Calouste Gulbenkian’ for the financial support given.
PY - 2003/3/3
Y1 - 2003/3/3
N2 - Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 × 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production.
AB - Despite of a growing interest in this material, until now the studies on polymorphous silicon (pm-Si:H) have been performed on small laboratory reactors working at 13.56 MHz. Envisaging an industrial application of pm-Si:H, the technology was transferred to a large area plasma enhanced chemical vapour deposition reactor (25 × 40 cm2) working at excitation frequencies of 13.56 and 27.12 MHz. The plasma was characterized by impedance probe measurements and the films were characterized by spectroscopic ellipsometry, infrared spectroscopy and hydrogen evolution experiments, which are techniques that allow a rapid and reliable identification of pm-Si:H structure. Conductivity measurements were also performed to determine their transport properties. The results show that scaling up using the 13.56 MHz was successfully done and pm-Si:H films were deposited at a growth rate of ≈ 12 nm/min. Moreover, by using the 27.12 MHz excitation frequency the growth rate was even further increased to above 18 nm/min, as desired for industrial production.
KW - Amorphous silicon
KW - Plasma diagnostics
KW - Polymorphous
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=0037416699&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(02)01172-0
DO - 10.1016/S0040-6090(02)01172-0
M3 - Conference article
AN - SCOPUS:0037416699
VL - 427
SP - 6
EP - 10
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
T2 - 4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference
Y2 - 18 June 2002 through 21 June 2002
ER -