TY - JOUR
T1 - Polycrystalline silicon obtained by metal induced crystallization using different metals
AU - Pereira, Luis Miguel Nunes
AU - Águas, Hugo Manuel Brito
AU - Martins, R. M. S.
AU - Vilarinho, P. M.
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2004/3/22
Y1 - 2004/3/22
N2 - The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.
AB - The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.
KW - Annealing
KW - Polycrystalline silicon
KW - Metal induced crystallization
U2 - 10.1016/j.tsf.2003.10.124
DO - 10.1016/j.tsf.2003.10.124
M3 - Article
SN - 0040-6090
VL - 451-52
SP - 334
EP - 339
JO - Thin Solid Films
JF - Thin Solid Films
IS - NA
ER -