Polycrystalline silicon obtained by metal induced crystallization using different metals

Luis Miguel Nunes Pereira; Hugo Manuel Brito Águas; R. M. S. Martins; P. M. Vilarinho; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.tsf.2003.10.124

Polycrystalline silicon obtained by metal induced crystallization using different metals

Luis Miguel Nunes Pereira, Hugo Manuel Brito Águas, R. M. S. Martins, P. M. Vilarinho, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.

Original language	English
Pages (from-to)	334-339
Number of pages	6
Journal	Thin Solid Films
Volume	451-52
Issue number	NA
DOIs	https://doi.org/10.1016/j.tsf.2003.10.124
Publication status	Published - 22 Mar 2004

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10.1016/j.tsf.2003.10.124

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title = "Polycrystalline silicon obtained by metal induced crystallization using different metals",

abstract = "The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.",

keywords = "Annealing, Polycrystalline silicon, Metal induced crystallization",

author = "Pereira, {Luis Miguel Nunes} and {\'A}guas, {Hugo Manuel Brito} and Martins, {R. M. S.} and Vilarinho, {P. M.} and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

month = mar,

day = "22",

doi = "10.1016/j.tsf.2003.10.124",

language = "English",

volume = "451-52",

pages = "334--339",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "NA",

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Polycrystalline silicon obtained by metal induced crystallization using different metals. / Pereira, Luis Miguel Nunes ; Águas, Hugo Manuel Brito; Martins, R. M. S.; Vilarinho, P. M.; Fortunato, Elvira Maria Correia ; Martins, Rodrigo Ferrão de Paiva.

In: Thin Solid Films, Vol. 451-52, No. NA, 22.03.2004, p. 334-339.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Polycrystalline silicon obtained by metal induced crystallization using different metals

AU - Pereira, Luis Miguel Nunes

AU - Águas, Hugo Manuel Brito

AU - Martins, R. M. S.

AU - Vilarinho, P. M.

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.

AB - The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells.

KW - Annealing

KW - Polycrystalline silicon

KW - Metal induced crystallization

U2 - 10.1016/j.tsf.2003.10.124

DO - 10.1016/j.tsf.2003.10.124

M3 - Article

VL - 451-52

SP - 334

EP - 339

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - NA

ER -

Polycrystalline silicon obtained by metal induced crystallization using different metals

Abstract

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