Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

A. Pimentel; E. Fortunato; A. Gonçalves; A. C. Marques; H. Águas; L. Pereira; I. Ferreira; R. Martins

doi:10.1016/j.tsf.2005.01.067

Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

A. Pimentel, E. Fortunato, A. Gonçalves, A. C. Marques, H. Águas, L. Pereira, I. Ferreira, R. Martins

Research output: Contribution to journal › Conference article › peer-review

52 Citations (Scopus)

Abstract

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×10⁸ Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.

Original language	English
Pages (from-to)	212-215
Number of pages	4
Journal	Thin Solid Films
Volume	487
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.01.067
Publication status	Published - 1 Sept 2005
Event	International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications - Duration: 5 Sept 2004 → 10 Sept 2004

Keywords

Electrical properties
rf magnetron sputtering
Thin films
ZnO

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10.1016/j.tsf.2005.01.067Licence: CC BY-NC-ND

Cite this

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title = "Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices",

abstract = "In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.",

keywords = "Electrical properties, rf magnetron sputtering, Thin films, ZnO",

author = "A. Pimentel and E. Fortunato and A. Gon{\c c}alves and Marques, {A. C.} and H. {\'A}guas and L. Pereira and I. Ferreira and R. Martins",

note = "This work is supported by the {\textquoteleft}Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia{\textquoteright} through Pluriannual Contracts with CENIMAT and by the project POCTI/2001/CTM/38924.; International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications ; Conference date: 05-09-2004 Through 10-09-2004",

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doi = "10.1016/j.tsf.2005.01.067",

language = "English",

volume = "487",

pages = "212--215",

journal = "Thin Solid Films",

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T1 - Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

AU - Pimentel, A.

AU - Fortunato, E.

AU - Gonçalves, A.

AU - Marques, A. C.

AU - Águas, H.

AU - Pereira, L.

AU - Ferreira, I.

AU - Martins, R.

N1 - This work is supported by the ‘Fundação para a Ciência e a Tecnologia’ through Pluriannual Contracts with CENIMAT and by the project POCTI/2001/CTM/38924.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.

AB - In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.

KW - Electrical properties

KW - rf magnetron sputtering

KW - Thin films

KW - ZnO

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U2 - 10.1016/j.tsf.2005.01.067

DO - 10.1016/j.tsf.2005.01.067

M3 - Conference article

AN - SCOPUS:22944488292

SN - 0040-6090

VL - 487

SP - 212

EP - 215

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications

Y2 - 5 September 2004 through 10 September 2004

ER -

Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

Abstract

Keywords

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