Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

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52 Citations (Scopus)


In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5×108 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface.

Original languageEnglish
Pages (from-to)212-215
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1 Sept 2005
EventInternational Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications -
Duration: 5 Sept 200410 Sept 2004


  • Electrical properties
  • rf magnetron sputtering
  • Thin films
  • ZnO


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