p/n junction depth control using amorphous silicon as a low temperature dopant source

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Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced ChemicalVapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation wasdone in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from theamorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods andtemperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si:H films prior to diffusion,both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the rangeof 98 nm to 2.4 μm and surface concentrations are in the range of 1.1 × 10^21 to 4.3 × 10^20at/cm3. A dualdiffusion mechanism explains the "kink-and-tail" shape found for dopant profile.
Original languageUnknown
Pages (from-to)122-124
JournalThin Solid Films
Issue numberNA
Publication statusPublished - 1 Jan 2013

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