Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors

Rita Branquinho; Joana Vaz Pinto; Tito Livio Busani; Pedro Miguel Cândido Barquinha; Luis Miguel Nunes Pereira; Pedro Miguel Ribeiro Viana Baptista; Rodrigo Ferrão de Paiva Martins; Elvira Maria Correia Fortunato

doi:10.1109/JDT.2012.2229693

Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors

Rita Branquinho, Joana Vaz Pinto, Tito Livio Busani, Pedro Miguel Cândido Barquinha, Luis Miguel Nunes Pereira, Pedro Miguel Ribeiro Viana Baptista, Rodrigo Ferrão de Paiva Martins, Elvira Maria Correia Fortunato

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 degrees C and crystallize at 700 degrees C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 degrees C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 degrees C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

Original language	English
Pages (from-to)	723-728
Journal	Journal Of Display Technology
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/JDT.2012.2229693
Publication status	Published - Sept 2013

Keywords

Biosensors
Electrolyte-insulator-semiconductor (eis) sensor
Ph sensitivity
Sputtered +{\hbox{ta}}-{2}{\hbox{O}}5

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@article{546150671aa1488fb97e92e09c5c3a25,

title = "Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors",

abstract = "The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 degrees C and crystallize at 700 degrees C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 degrees C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 degrees C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.",

keywords = "electrolyte-insulator-semiconductor (EIS) sensor, sputtered Ta2O5, Biosensors, pH sensitivity, Biosensors , Electrolyte-insulator-semiconductor (eis) sensor , Ph sensitivity , Sputtered +{\hbox{ta}}-{2}{\hbox{O}}5",

author = "Rita Branquinho and {Vaz Pinto}, Joana and Busani, {Tito Livio} and Barquinha, {Pedro Miguel C{\^a}ndido} and Pereira, {Luis Miguel Nunes} and Baptista, {Pedro Miguel Ribeiro Viana} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia}",

note = "Sem PDF conforme Despacho. This work was supported in part by the Portuguese Science and Technology Foundation (FCT), Ministry for Education and Science (MEC), under Project BloodFET PTDC/SAU-BEB/098125/2008 and also by Strategic Project PEst-C/CTM/LA0025/2011. The work of R. Branquinho was supported by INL under a Ph.D. Fellowship. The work of J. V. Pinto was supported by FCT-MCTES under fellowship SFRH/BPD/44874/2008.",

year = "2013",

month = sep,

doi = "10.1109/JDT.2012.2229693",

language = "English",

volume = "9",

pages = "723--728",

journal = "Journal Of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "9",

}

TY - JOUR

T1 - Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors

AU - Branquinho, Rita

AU - Vaz Pinto, Joana

AU - Busani, Tito Livio

AU - Barquinha, Pedro Miguel Cândido

AU - Pereira, Luis Miguel Nunes

AU - Baptista, Pedro Miguel Ribeiro Viana

AU - Martins, Rodrigo Ferrão de Paiva

AU - Fortunato, Elvira Maria Correia

N1 - Sem PDF conforme Despacho. This work was supported in part by the Portuguese Science and Technology Foundation (FCT), Ministry for Education and Science (MEC), under Project BloodFET PTDC/SAU-BEB/098125/2008 and also by Strategic Project PEst-C/CTM/LA0025/2011. The work of R. Branquinho was supported by INL under a Ph.D. Fellowship. The work of J. V. Pinto was supported by FCT-MCTES under fellowship SFRH/BPD/44874/2008.

PY - 2013/9

Y1 - 2013/9

N2 - The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 degrees C and crystallize at 700 degrees C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 degrees C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 degrees C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

AB - The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 degrees C and crystallize at 700 degrees C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 degrees C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 degrees C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

KW - electrolyte-insulator-semiconductor (EIS) sensor

KW - sputtered Ta2O5

KW - Biosensors

KW - pH sensitivity

KW - Biosensors

KW - Electrolyte-insulator-semiconductor (eis) sensor

KW - Ph sensitivity

KW - Sputtered +{\hbox{ta}}-{2}{\hbox{O}}5

U2 - 10.1109/JDT.2012.2229693

DO - 10.1109/JDT.2012.2229693

M3 - Article

SN - 1551-319X

VL - 9

SP - 723

EP - 728

JO - Journal Of Display Technology

JF - Journal Of Display Technology

IS - 9

ER -

Plastic Compatible Sputtered Ta2O5 Sensitive Layer for Oxide Semiconductor TFT Sensors

Abstract

Keywords

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