TY - JOUR
T1 - Photothermoelectric AZO/SiO2/NiO Device
AU - Bianchi, Catarina
AU - Marques, Ana
AU - Ferreira, Isabel
N1 - Funding Information:
info:eu-repo/grantAgreement/EC/H2020/647596/EU#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT#
This work was mainly funded by ERC‐CoG‐2014, and partially funded by FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the Project Nos. LA/P/0037/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication – i3N.
Publisher Copyright:
© 2023 The Authors. Advanced Materials Technologies published by Wiley-VCH GmbH.
PY - 2023/8/11
Y1 - 2023/8/11
N2 - Transparent-conductive-oxide (TCO) materials and transparent devices combining photovoltage and thermoelectric effects are still scarce. Hence, a new transparent-conductive-oxide/insulating/transparent-semiconductor-oxide (TCO-I-TSO) structure combining such effects is developed. It is made of aluminum-doped zinc oxide (AZO)/SiO2/NiO thin films sequentially deposited on glass substrates. AZO exhibits thermo and photovoltage in response to gradient temperature and absorption of UV photons, while NIR photons absorption in the NiO layer. Photovoltage appears in the plane between the AZO and NiO layer when the whole sample is irradiated with near infrared light, and it also depends on the thickness of the SiO2 layer. This photovoltage is continuously monitored on samples placed in a glass window facing south. Throughout the day, the photovoltage varies from 0 to 300 µV proportionally to the light intensity.
AB - Transparent-conductive-oxide (TCO) materials and transparent devices combining photovoltage and thermoelectric effects are still scarce. Hence, a new transparent-conductive-oxide/insulating/transparent-semiconductor-oxide (TCO-I-TSO) structure combining such effects is developed. It is made of aluminum-doped zinc oxide (AZO)/SiO2/NiO thin films sequentially deposited on glass substrates. AZO exhibits thermo and photovoltage in response to gradient temperature and absorption of UV photons, while NIR photons absorption in the NiO layer. Photovoltage appears in the plane between the AZO and NiO layer when the whole sample is irradiated with near infrared light, and it also depends on the thickness of the SiO2 layer. This photovoltage is continuously monitored on samples placed in a glass window facing south. Throughout the day, the photovoltage varies from 0 to 300 µV proportionally to the light intensity.
KW - infrared absorption
KW - photothermoelectrics
KW - transparent devices
UR - http://www.scopus.com/inward/record.url?scp=85151942725&partnerID=8YFLogxK
U2 - 10.1002/admt.202300133
DO - 10.1002/admt.202300133
M3 - Article
AN - SCOPUS:85151942725
SN - 2365-709X
VL - 8
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 15
M1 - 2300133
ER -