Photodiode with nanocrystalline Si/amorphous Si absorber bilayer

Research output: Contribution to journalArticle

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Abstract

This letter reports a near-ultraviolet/visible/near-infrared n+-n-i-δi-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm2 at −1 V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively.
Original languageUnknown
Pages (from-to)191111
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
Publication statusPublished - 1 Jan 2011

Keywords

    Cite this

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    title = "Photodiode with nanocrystalline Si/amorphous Si absorber bilayer",
    abstract = "This letter reports a near-ultraviolet/visible/near-infrared n+-n-i-δi-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm2 at −1 V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively.",
    keywords = "SILICON, MICROCRYSTALLINE",
    author = "Vieira, {Maria Manuela de Almeida Carvalho} and {DEE Group Author}",
    year = "2011",
    month = "1",
    day = "1",
    doi = "10.1063/1.3660725",
    language = "Unknown",
    volume = "99",
    pages = "191111",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "AMER INST PHYSICS",
    number = "19",

    }

    Photodiode with nanocrystalline Si/amorphous Si absorber bilayer. / Vieira, Maria Manuela de Almeida Carvalho; DEE Group Author.

    In: Applied Physics Letters, Vol. 99, No. 19, 01.01.2011, p. 191111.

    Research output: Contribution to journalArticle

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    T1 - Photodiode with nanocrystalline Si/amorphous Si absorber bilayer

    AU - Vieira, Maria Manuela de Almeida Carvalho

    AU - DEE Group Author

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    N2 - This letter reports a near-ultraviolet/visible/near-infrared n+-n-i-δi-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm2 at −1 V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively.

    AB - This letter reports a near-ultraviolet/visible/near-infrared n+-n-i-δi-p photodiode with an absorber comprising a nanocrystalline silicon n layer and a hydrogenated amorphous silicon i layer. Device modeling reveals that the dominant source of reverse dark current is deep defect states in the n layer, and its magnitude is controlled by the i layer thickness. The photodiode with the 900/400 nm thick n-i layers exhibits a reverse dark current density of 3nA/cm2 at −1 V. Donor concentration and diffusion length of holes in the n layer are estimated from the capacitance-voltage characteristics and from the bias dependence of long-wavelength response, respectively.

    KW - SILICON

    KW - MICROCRYSTALLINE

    U2 - 10.1063/1.3660725

    DO - 10.1063/1.3660725

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    SP - 191111

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    JF - Applied Physics Letters

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