Photoconductivity kinetics of indium sulfofluoride thin films

Yuri Vygranenko; Miguel Fernandes; Manuela Vieira; Guilherme Lavareda; Carlos Nunes De Carvalho; Pedro Brogueira; Ana Amaral

doi:10.1051/epjap/2020190265

Photoconductivity kinetics of indium sulfofluoride thin films

Yuri Vygranenko, Miguel Fernandes, Manuela Vieira, Guilherme Lavareda, Carlos Nunes De Carvalho, Pedro Brogueira, Ana Amaral

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (∼200 Mω -cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.

Original language	English
Article number	10302
Journal	EPJ Applied Physics
Volume	89
Issue number	1
DOIs	https://doi.org/10.1051/epjap/2020190265
Publication status	Published - 1 Jan 2020

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title = "Photoconductivity kinetics of indium sulfofluoride thin films",

abstract = "Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (∼200 Mω -cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.",

author = "Yuri Vygranenko and Miguel Fernandes and Manuela Vieira and Guilherme Lavareda and {Nunes De Carvalho}, Carlos and Pedro Brogueira and Ana Amaral",

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AU - Vygranenko, Yuri

AU - Fernandes, Miguel

AU - Vieira, Manuela

AU - Lavareda, Guilherme

AU - Nunes De Carvalho, Carlos

AU - Brogueira, Pedro

AU - Amaral, Ana

N1 - Fundação para a Ciencia e a Tecnologia - project PhotoAKI: PTDC/NAN-OPT/31311/2017; IPL/2019/BioPlas-ISEL; pluriannual contract with CeFEMA (UID/CTM/04540/2019).

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (∼200 Mω -cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.

AB - Indium sulfofluoride is an amorphous wide-gap semiconductor exhibiting high sensitivity to UV radiation. This work reports on the kinetics of photoconductivity in indium sulfofluoride thin films along with their electrical and optical properties. The films were deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The film characterization includes electrical, optical, and photoconductivity measurements. The films are highly transparent in the visible-infrared range due to an indirect bandgap of 2.8 eV. The spectral response measurements have revealed existence of the band tail states. The synthesized compound is highly resistive (∼200 Mω -cm at 300 K) and exhibits extremely slow photocurrent relaxations. Photoconductivity kinetics was studied under various excitation conditions. A dependence of the photocurrent on the incident photon flux was also determined.

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JO - EPJ Applied Physics

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Photoconductivity kinetics of indium sulfofluoride thin films

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