Photochemical sensors based on amorphous silicon thin films

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5 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon photochemical sensors based on Pd metal/insulator/semiconductor (Pd-MIS) structures were produced by plasma enhanced chemical vapour deposition (PECVD) with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases adsorbed, in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than two orders of magnitude variation on the reverse dark current in the presence of 400 ppm hydrogen. When the sensors are submitted to light it corresponds a decrease of 45% on the open circuit voltage.

Original languageEnglish
Pages (from-to)202-207
Number of pages6
JournalSensors And Actuators B-Chemical
VolumeB46
Issue number3
DOIs
Publication statusPublished - May 1998

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