Reported herein is a nonvolatile n-type floating gate memory paper field-effect transistor, emphasizing the role of the paper structure and properties on the device performance recorded such as in the high capacitance per unit area at low frequencies (>2.5 mu Fcm(-2)) and so on the set of high charge retention times achieved (>16000 hours). The device was built via the hybrid integration of natural cellulose fibers, which act simultaneously as substrate and gate dielectric, using amorphous indium zinc and gallium indium zinc oxides respectively for the gate electrode and channel layer. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.
Original languageUnknown
Title of host publicationProceedings of SPIE
Pagesnr. 760314
Publication statusPublished - 1 Jan 2010
EventConference on Oxide-based Materials and Devices -
Duration: 1 Jan 2010 → …


ConferenceConference on Oxide-based Materials and Devices
Period1/01/10 → …

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