Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources

David Cavalheiro; Francesc Moll; Stanimir Valtchev

doi:10.1109/ISCAS.2015.7168825

Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources

David Cavalheiro, Francesc Moll, Stanimir Valtchev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Citations (Scopus)

Abstract

The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.

Original language	English
Title of host publication	2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1082-1085
Number of pages	4
Volume	2015-July
ISBN (Electronic)	978-1-4799-8391-9
DOIs	https://doi.org/10.1109/ISCAS.2015.7168825
Publication status	Published - 1 Jan 2015
Event	IEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal Duration: 24 May 2015 → 27 May 2015

Conference

Conference	IEEE International Symposium on Circuits and Systems, ISCAS 2015
Country	Portugal
City	Lisbon
Period	24/05/15 → 27/05/15

Keywords

Charge Pump
Energy Harvesting
FinFET
Thermo-electric
Tunnel FET
Ultra-Low Power

Access to Document

10.1109/ISCAS.2015.7168825

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Cite this

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title = "Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources",

abstract = "The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.",

keywords = "Charge Pump, Energy Harvesting, FinFET, Thermo-electric, Tunnel FET, Ultra-Low Power",

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Cavalheiro, D, Moll, F & Valtchev, S 2015, Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources. in 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. vol. 2015-July, 7168825, Institute of Electrical and Electronics Engineers Inc., pp. 1082-1085, IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, 24/05/15. https://doi.org/10.1109/ISCAS.2015.7168825

Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources. / Cavalheiro, David; Moll, Francesc; Valtchev, Stanimir.

2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Vol. 2015-July Institute of Electrical and Electronics Engineers Inc., 2015. p. 1082-1085 7168825.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.

AB - The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.

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