Abstract
The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.
Original language | English |
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Title of host publication | 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1082-1085 |
Number of pages | 4 |
Volume | 2015-July |
ISBN (Electronic) | 978-1-4799-8391-9 |
DOIs | |
Publication status | Published - 1 Jan 2015 |
Event | IEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal Duration: 24 May 2015 → 27 May 2015 |
Conference
Conference | IEEE International Symposium on Circuits and Systems, ISCAS 2015 |
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Country | Portugal |
City | Lisbon |
Period | 24/05/15 → 27/05/15 |
Keywords
- Charge Pump
- Energy Harvesting
- FinFET
- Thermo-electric
- Tunnel FET
- Ultra-Low Power