Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources

David Cavalheiro, Francesc Moll, Stanimir Valtchev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The superior electrical characteristics of the heterojunction III-V Tunnel FET (TFET) devices can outperform current technologies in the process of energy harvesting conversion at ultra-low power supply voltage operation (sub-0.25 V). In this work, it is shown by simulations that a cross-coupled switched-capacitor topology with GaSb-InAs TFET devices present better conversion performance compared to the use of Si FinFET technology at low temperature variations (ΔT < 3 °C) when considering a thermo-electric energy harvesting source (with α = 80 mV/K). At higher ΔT, the conversion process is degraded with the increase of the transistor losses. Considering a ΔT of 1°C (2°C), one cross-coupled stage with TFET devices can achieve 74 % (69 %) of power conversion efficiency when considering an output load of 0.4 μA (6 μA). At the same conditions, the FinFET charge pump is shown inefficient.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1082-1085
Number of pages4
Volume2015-July
ISBN (Electronic)978-1-4799-8391-9
DOIs
Publication statusPublished - 1 Jan 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: 24 May 201527 May 2015

Conference

ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period24/05/1527/05/15

Keywords

  • Charge Pump
  • Energy Harvesting
  • FinFET
  • Thermo-electric
  • Tunnel FET
  • Ultra-Low Power

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  • Cite this

    Cavalheiro, D., Moll, F., & Valtchev, S. (2015). Pespectives of TFET devices in ultra-low power charge pumps for thermo-electric energy sources. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015 (Vol. 2015-July, pp. 1082-1085). [7168825] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2015.7168825