Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design

Stanimir Stoyanov Valtchev, DEE Group Author

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.
Original languageUnknown
Title of host publicationProceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebastián, Nov. 2013
Pages152-157
Publication statusPublished - 1 Jan 2014
EventXVIII Conference on the Design of Circuits and Integrated Systems -
Duration: 1 Jan 2013 → …

Conference

ConferenceXVIII Conference on the Design of Circuits and Integrated Systems
Period1/01/13 → …

Cite this

Valtchev, S. S., & DEE Group Author (2014). Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design. In Proceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebastián, Nov. 2013 (pp. 152-157)