Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design

Stanimir Stoyanov Valtchev; DEE Group Author

Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design

Stanimir Stoyanov Valtchev, DEE Group Author

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.

Original language	Unknown
Title of host publication	Proceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebastián, Nov. 2013
Pages	152-157
Publication status	Published - 1 Jan 2014
Event	XVIII Conference on the Design of Circuits and Integrated Systems - Duration: 1 Jan 2013 → …

Conference

Conference	XVIII Conference on the Design of Circuits and Integrated Systems
Period	1/01/13 → …

Cite this

@inproceedings{814faa3b3dc54a37b13ec749e6ff8a7d,

title = "Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design",

abstract = "The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.",

keywords = "Common source amplifier, Tunnel FET (TFET), FINFET, Ultra-Low Power, Analog design, Output resistance",

author = "Valtchev, {Stanimir Stoyanov} and {DEE Group Author}",

year = "2014",

month = jan,

day = "1",

language = "Unknown",

isbn = "978-84-8081-401-0",

pages = "152--157",

booktitle = "Proceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebasti{\'a}n, Nov. 2013",

note = "XVIII Conference on the Design of Circuits and Integrated Systems ; Conference date: 01-01-2013",

}

Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design. / Valtchev, Stanimir Stoyanov; DEE Group Author.
Proceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebastián, Nov. 2013. 2014. p. 152-157.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Perspectives of Tunnel FET (TFET) in Ultra-Low- Power Analog-Circuit design

AU - Valtchev, Stanimir Stoyanov

AU - DEE Group Author

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.

AB - The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.

KW - Common source amplifier

KW - Tunnel FET (TFET)

KW - FINFET

KW - Ultra-Low Power

KW - Analog design

KW - Output resistance

M3 - Conference contribution

SN - 978-84-8081-401-0

SP - 152

EP - 157

BT - Proceedings of the XVIII Conference on the Design of Circuits and Integrated Systems Donostia - San Sebastián, Nov. 2013

T2 - XVIII Conference on the Design of Circuits and Integrated Systems

Y2 - 1 January 2013

ER -