We have investigated the optoelectronic, structure, morphology and chemicalcomposition properties of a- or Jlc- Si:C:H undoped and doped films produced by a TwoConsecutive Decomposition and Deposition Chamber (TCDDC) system, in the presenceof controlled electromagnetic static fields. The perfonnances of this method and itscorrelation with structure and transport properties presented by deposited films arediscussed. The obtained results show that film's growth is controlled by plasma inducedDC bias which controIs gas decomposition process and the rate of impinging ions on thesurface. Good quality undoped amorphous silicon films, suitable for photovoltaic (PV)applications, are produced by using power densities (dp) lower than 10 mW/cm3.Transition from amorphous to microcrystalline phase is achieved by using hydrogendilution ratios higher than 3% and dp>100 mW/cm3,whatever the kind of alloydeposited. Conceming the production of amorphous silicon carbide alloys, goodcorrelation, between the concentration of carbon atoms in the gas phase, and those onesincorporated is achieved. Low absorption wide band gap material ( WBG ) with<Jd~ 10-1(Qcm)-l and optical gap Eop=2.5 eV have been also produced gatheringattention in its application as window or back layer in the production of solar cells.
|Title of host publication||Proceedings of the eighth European Communities Photovoltaic Solar Energy Conference|
|Number of pages||8|
|Publication status||Published - 1988|