A rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm x 5 cm detection area, has been developed, by using hydrogenated amorphous silicon (a-Si:H) PIN photodiode, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The requirements needed for the fabrication of these devices are the thickness uniformity of the different layers, the geometry and the contacts location. In this paper we present results on PSD with special emphasis on the linearity as well as on its response time.
|Number of pages||10|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - May 1993|
|Event||Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy|
Duration: 23 May 1993 → 28 May 1993