Performances presented by a Position Sensitive Detector based on amorphous silicon technology

Elvira Fortunato, Manuela Vieira, Carlos N. Carvalho, Guilherme Lavareda, Rodrigo Martins, Fernando Soares, Luis Alberto Almeida Ferreira

Research output: Contribution to journalConference articlepeer-review

Abstract

A rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm x 5 cm detection area, has been developed, by using hydrogenated amorphous silicon (a-Si:H) PIN photodiode, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The requirements needed for the fabrication of these devices are the thickness uniformity of the different layers, the geometry and the contacts location. In this paper we present results on PSD with special emphasis on the linearity as well as on its response time.

Original languageEnglish
Pages (from-to)570-579
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
Publication statusPublished - May 1993
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: 23 May 199328 May 1993

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