Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique

I. Ferreira, H. Aguas, L. Mendes, F. Fernandes, E. Fortunato, R. Martins

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4 mWcm-2) and with filament temperatures around 1850 °K have dark conductivities below 10-10 Scm-1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM1.5), with almost no traces of oxygen content. N-doped silicon films were also fabricated under the same conditions which attained conductivities of about 10-2 Scm-1.

Original languageEnglish
Pages (from-to)607-612
Number of pages6
JournalMRS Proceedings
Volume507
Publication statusPublished - 1999

Fingerprint Dive into the research topics of 'Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique'. Together they form a unique fingerprint.

Cite this