In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with similar to 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 degrees C and 300 degrees C exhibited, respectively, a saturation mobility of similar to 2.9 cm(2) . V-1 . s(-1) and 1.45 cm(2) . V-1 . s(-1); V-ON voltage of similar to 0.15 V, and 0.2 V; a sub-threshold swing of similar to 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of similar to 3.5 x 10(5) and 6 x 10(3), for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.