Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis

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Abstract

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with similar to 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 degrees C and 300 degrees C exhibited, respectively, a saturation mobility of similar to 2.9 cm(2) . V-1 . s(-1) and 1.45 cm(2) . V-1 . s(-1); V-ON voltage of similar to 0.15 V, and 0.2 V; a sub-threshold swing of similar to 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of similar to 3.5 x 10(5) and 6 x 10(3), for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.
Original languageUnknown
Pages (from-to)825-831
JournalJournal Of Display Technology
Volume9
Issue number10
DOIs
Publication statusPublished - 1 Jan 2013

Cite this

@article{56ca3e2f1c084a3b9cdbddc31e3abb80,
title = "Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis",
abstract = "In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with similar to 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 degrees C and 300 degrees C exhibited, respectively, a saturation mobility of similar to 2.9 cm(2) . V-1 . s(-1) and 1.45 cm(2) . V-1 . s(-1); V-ON voltage of similar to 0.15 V, and 0.2 V; a sub-threshold swing of similar to 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of similar to 3.5 x 10(5) and 6 x 10(3), for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.",
keywords = "thin-film transistor (TFT), spray coating, zinc tin oxide (ZTO), Low temperature, solution process",
author = "Elangovan Elamurugu and Shanmugam Parthiban and Nayak, {Pradipta K.} and Alexandra Gon{\cc}alves and D. Nunes and Pereira, {Luis Miguel Nunes} and Barquinha, {Pedro Miguel C{\^a}ndido} and Busani, {Tito Livio} and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/JDT.2013.2262096",
language = "Unknown",
volume = "9",
pages = "825--831",
journal = "Journal Of Display Technology",
issn = "1551-319X",
publisher = "IEEE Computer Society",
number = "10",

}

TY - JOUR

T1 - Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis

AU - Elamurugu, Elangovan

AU - Parthiban, Shanmugam

AU - Nayak, Pradipta K.

AU - Gonçalves, Alexandra

AU - Nunes, D.

AU - Pereira, Luis Miguel Nunes

AU - Barquinha, Pedro Miguel Cândido

AU - Busani, Tito Livio

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2013/1/1

Y1 - 2013/1/1

N2 - In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with similar to 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 degrees C and 300 degrees C exhibited, respectively, a saturation mobility of similar to 2.9 cm(2) . V-1 . s(-1) and 1.45 cm(2) . V-1 . s(-1); V-ON voltage of similar to 0.15 V, and 0.2 V; a sub-threshold swing of similar to 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of similar to 3.5 x 10(5) and 6 x 10(3), for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.

AB - In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with similar to 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 degrees C and 300 degrees C exhibited, respectively, a saturation mobility of similar to 2.9 cm(2) . V-1 . s(-1) and 1.45 cm(2) . V-1 . s(-1); V-ON voltage of similar to 0.15 V, and 0.2 V; a sub-threshold swing of similar to 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of similar to 3.5 x 10(5) and 6 x 10(3), for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances.

KW - thin-film transistor (TFT)

KW - spray coating

KW - zinc tin oxide (ZTO)

KW - Low temperature

KW - solution process

U2 - 10.1109/JDT.2013.2262096

DO - 10.1109/JDT.2013.2262096

M3 - Article

VL - 9

SP - 825

EP - 831

JO - Journal Of Display Technology

JF - Journal Of Display Technology

SN - 1551-319X

IS - 10

ER -