Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Engineering & Materials Science

• Hafnium oxides 100%
• Gate dielectrics 80%
• Sputtering 72%
• Permittivity 37%
• Spectroscopic ellipsometry 34%
• Silicon oxides 27%
• Stoichiometry 25%
• Metals 24%
• Oxide films 23%
• Thick films 23%
• Semiconductor devices 22%
• Leakage currents 20%
• Electric properties 20%
• Electric potential 19%
• Thin films 17%
• Semiconductor materials 16%
• Capacitance 16%
• Data storage equipment 11%

Physics & Astronomy

• hafnium oxides 77%
• radio frequencies 48%
• sputtering 44%
• MIS (semiconductors) 42%
• permittivity 26%
• performance 25%
• void ratio 21%
• electric potential 20%
• silicon oxides 19%
• semiconductor devices 19%
• ellipsometry 18%
• stoichiometry 18%
• thick films 17%
• high current 17%
• leakage 15%
• capacitance 15%
• electrical properties 13%
• thin films 9%

Chemistry

• Hafnium Atom 67%
• Sputtering 61%
• Dielectric Material 50%
• Oxide 30%
• Liquid Film 27%
• Dielectric Constant 25%
• Leakage Current 18%
• Memory Effect 18%
• Application 17%
• Silicon Oxide 17%
• Ellipsometry 15%
• Electrical Property 11%
• Reaction Stoichiometry 11%