P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins; Elvira Maria Correia Fortunato; Raquel Barros; Nuno Filipe de Oliveira  Correia; Vitor Manuel Loureiro  Figueiredo; Sang Hee Ko Park; Chi Sun Hwang

P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

Pedro Miguel Cândido Barquinha (Inventor), Rodrigo Ferrão de Paiva Martins (Inventor), Elvira Maria Correia Fortunato (Inventor), Raquel Barros (Inventor), Nuno Filipe de Oliveira Correia (Inventor), Vitor Manuel Loureiro Figueiredo (Inventor), Sang Hee Ko Park (Inventor), Chi Sun Hwang (Inventor)

Research output: Patent › International PCT application

Abstract

The present invention relates to thin films comprising non- stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [ (OCu2) x+ (Cu1-2) y, wherein 0.05=xax with embedded metal tin (Snßx) [ (OSn) z+ (Sn1-2)w wherein 0.05cx-Snßx alloys with embedded metal Sn and Cu [ (O-Cu- Sn) a+ (Cua-Snß)b with 0x with embedded Ni and Sn species [ (O-Ni )a+ (Nia-Snß)b with 0<a<2 and 0<ß<2, wherein 0.05=a<1 and 0.01=b=0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.

Original language	English
Patent number	WO2011125036
Filing date	6/04/11
Publication status	Published - 13 Oct 2011

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https://worldwide.espacenet.com/publicationDetails/originalDocument?CC=WO&NR=2011125036A1&KC=A1&FT=D&ND=3&date=20111013&DB=EPODOC&locale=en_EP

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Barquinha, P. M. C., Martins, R. F. D. P., Fortunato, E. M. C., Barros, R., Correia, N. F. D. O., Figueiredo, V. M. L., Park, S. H. K., & Hwang, C. S. (2011). P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof. (Patent No. WO2011125036). World Intellectual Property Organization (WIPO). https://worldwide.espacenet.com/publicationDetails/originalDocument?CC=WO&NR=2011125036A1&KC=A1&FT=D&ND=3&date=20111013&DB=EPODOC&locale=en_EP

Barquinha, Pedro Miguel Cândido (Inventor) ; Martins, Rodrigo Ferrão de Paiva (Inventor) ; Fortunato, Elvira Maria Correia (Inventor) et al. / P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof. World Intellectual Property Organization (WIPO). Patent No.: WO2011125036. Oct 13, 2011.

@misc{672c723b8a2b469ca5068698afa0d816,

title = "P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof",

abstract = "The present invention relates to thin films comprising non- stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [ (OCu2) x+ (Cu1-2) y, wherein 0.05=xax with embedded metal tin (Sn{\ss}x) [ (OSn) z+ (Sn1-2)w wherein 0.05cx-Sn{\ss}x alloys with embedded metal Sn and Cu [ (O-Cu- Sn) a+ (Cua-Sn{\ss})b with 0x with embedded Ni and Sn species [ (O-Ni )a+ (Nia-Sn{\ss})b with 0<a<2 and 0<{\ss}<2, wherein 0.05=a<1 and 0.01=b=0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.",

author = "Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia} and Raquel Barros and Correia, {Nuno Filipe de Oliveira} and Figueiredo, {Vitor Manuel Loureiro} and Park, {Sang Hee Ko} and Hwang, {Chi Sun}",

year = "2011",

month = oct,

day = "13",

language = "English",

publisher = "World Intellectual Property Organization (WIPO)",

type = "Patent",

note = "WO2011125036",

}

Barquinha, PMC , Martins, RFDP , Fortunato, EMC , Barros, R , Correia, NFDO , Figueiredo, VML, Park, SHK & Hwang, CS Oct. 13 2011, P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof, Patent No. WO2011125036. <https://worldwide.espacenet.com/publicationDetails/originalDocument?CC=WO&NR=2011125036A1&KC=A1&FT=D&ND=3&date=20111013&DB=EPODOC&locale=en_EP>

P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof. / Barquinha, Pedro Miguel Cândido (Inventor); Martins, Rodrigo Ferrão de Paiva (Inventor); Fortunato, Elvira Maria Correia (Inventor) et al.
World Intellectual Property Organization (WIPO). Patent No.: WO2011125036. Oct 13, 2011.

Research output: Patent › International PCT application

TY - PAT

T1 - P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

AU - Fortunato, Elvira Maria Correia

AU - Barros, Raquel

AU - Correia, Nuno Filipe de Oliveira

AU - Figueiredo, Vitor Manuel Loureiro

AU - Park, Sang Hee Ko

AU - Hwang, Chi Sun

PY - 2011/10/13

Y1 - 2011/10/13

N2 - The present invention relates to thin films comprising non- stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [ (OCu2) x+ (Cu1-2) y, wherein 0.05=xax with embedded metal tin (Snßx) [ (OSn) z+ (Sn1-2)w wherein 0.05cx-Snßx alloys with embedded metal Sn and Cu [ (O-Cu- Sn) a+ (Cua-Snß)b with 0x with embedded Ni and Sn species [ (O-Ni )a+ (Nia-Snß)b with 0<a<2 and 0<ß<2, wherein 0.05=a<1 and 0.01=b=0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.

AB - The present invention relates to thin films comprising non- stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [ (OCu2) x+ (Cu1-2) y, wherein 0.05=xax with embedded metal tin (Snßx) [ (OSn) z+ (Sn1-2)w wherein 0.05cx-Snßx alloys with embedded metal Sn and Cu [ (O-Cu- Sn) a+ (Cua-Snß)b with 0x with embedded Ni and Sn species [ (O-Ni )a+ (Nia-Snß)b with 0<a<2 and 0<ß<2, wherein 0.05=a<1 and 0.01=b=0.9]; or combinations thereof, with amorphous, or nanocrystalline, or polycrystalline structure, either doped or not, with impurities such as zirconium, nitrogen or fluorine, for the fabrication of CMOS or TFT devices, with active matrices for LCD or OLED, fabrication of logic circuits, among others, using rigid or flexible substrates, wherein a protection layer, such as SU8 or the like, or silicon oxide or silicon nitride films are used for encapsulation.

M3 - International PCT application

M1 - WO2011125036

Y2 - 2011/04/06

PB - World Intellectual Property Organization (WIPO)

ER -

P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

Abstract

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