Abstract

Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.

Original languageEnglish
Article number6495484
Pages (from-to)735-740
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number9
DOIs
Publication statusPublished - 15 Apr 2013

Keywords

  • Copper oxide (CO)
  • p-type oxides
  • thermal oxidation
  • thin-film transistors (TFTs)

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