Abstract
Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.
Original language | English |
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Pages (from-to) | 41-47 |
Journal | Journal Of Display Technology |
Volume | 8 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2012 |
Keywords
- Copper oxide
- P-type oxides
- Sputtering
- Thin-film transistors (TFTs)