p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors

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Abstract

Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.
Original languageEnglish
Pages (from-to)41-47
JournalJournal Of Display Technology
Volume8
Issue number1
DOIs
Publication statusPublished - Jan 2012

Keywords

  • Copper oxide
  • P-type oxides
  • Sputtering
  • Thin-film transistors (TFTs)

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