p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors

Vitor Figueiredo; Elamurugu Elangovan; Raquel Barros; Joana Vaz Pinto; Tito Livio Busani; Rodrigo Ferrão de Paiva Martins; Elvira Maria Correia Fortunato

doi:10.1109/JDT.2011.2170153

p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors

Vitor Figueiredo, Elamurugu Elangovan, Raquel Barros, Joana Vaz Pinto, Tito Livio Busani, Rodrigo Ferrão de Paiva Martins, Elvira Maria Correia Fortunato

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.

Original language	English
Pages (from-to)	41-47
Journal	Journal Of Display Technology
Volume	8
Issue number	1
DOIs	https://doi.org/10.1109/JDT.2011.2170153
Publication status	Published - Jan 2012

Keywords

Copper oxide
P-type oxides
Sputtering
Thin-film transistors (TFTs)

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title = "p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors",

abstract = "Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.",

keywords = "p-type oxides, sputtering, thin-film transistors (TFTs), Copper oxide, Copper oxide , P-type oxides , Sputtering , Thin-film transistors (TFTs)",

author = "Vitor Figueiredo and Elamurugu Elangovan and Raquel Barros and {Vaz Pinto}, Joana and Busani, {Tito Livio} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia}",

note = "Sem PDF conforme Despacho. This work was supported in part by the European Commission under Projects INVISIBLE (FP7 ERC Grant 228144), ORAMA ( FP7 Grant 246334), and by the Portuguese Science Foundation (FCT-MCTES) through Project PTDC/EEA-ELC/099490/2008.",

year = "2012",

month = jan,

doi = "10.1109/JDT.2011.2170153",

language = "English",

volume = "8",

pages = "41--47",

journal = "Journal Of Display Technology",

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publisher = "IEEE Computer Society",

number = "1",

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T1 - p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors

AU - Figueiredo, Vitor

AU - Elangovan, Elamurugu

AU - Barros, Raquel

AU - Vaz Pinto, Joana

AU - Busani, Tito Livio

AU - Martins, Rodrigo Ferrão de Paiva

AU - Fortunato, Elvira Maria Correia

N1 - Sem PDF conforme Despacho. This work was supported in part by the European Commission under Projects INVISIBLE (FP7 ERC Grant 228144), ORAMA ( FP7 Grant 246334), and by the Portuguese Science Foundation (FCT-MCTES) through Project PTDC/EEA-ELC/099490/2008.

PY - 2012/1

Y1 - 2012/1

N2 - Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.

AB - Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.

KW - p-type oxides

KW - sputtering

KW - thin-film transistors (TFTs)

KW - Copper oxide

KW - P-type oxides

KW - Sputtering

KW - Thin-film transistors (TFTs)

U2 - 10.1109/JDT.2011.2170153

DO - 10.1109/JDT.2011.2170153

M3 - Article

SN - 1551-319X

VL - 8

SP - 41

EP - 47

JO - Journal Of Display Technology

JF - Journal Of Display Technology

IS - 1

ER -

p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors

Abstract

Keywords

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