TY - JOUR
T1 - p-Type CuOX Thin Films by rf-Plasma Enhanced Reactive Thermal Evaporation: Influence of rf-Power Density
AU - Lavareda, Guilherme António Rodrigues
AU - Carvalho, Carlos Alberto Nunes de
N1 - Sem PDF
PY - 2012/1/1
Y1 - 2012/1/1
N2 - Copper oxide is a well known p-type semiconductor material, usually obtained by thermal oxidation of copper thin-films within few minutes, at atmospheric pressure. In this paper, thin films of copper oxide that were deposited by radio-frequency plasma enhanced reactive thermal evaporation of copper at room temperature, without any post-deposition annealing treatment, are studied. The deposition of good quality p-type semiconductor oxide to be used in the fabrication of p-TFTs is the purpose of this work. The thickness of the films varies from 97 up to 160 nm. The influence of rf power density on chemical, electrical and optical properties of the films was studied. Samples present conductivity within the range of 6 x 10-5 to 4 x 102 Ω-1.cm-1 (thermal activation energy in the interval 0.46 to 0.01 eV). The p-type conductivity of the films was confirmed by Seebeck effect in the more conductive samples. Surface composition obtained by XPS analysis was correlated with optical and electrical properties, showing that rf-power plays a main role in changes of material characteristics.
AB - Copper oxide is a well known p-type semiconductor material, usually obtained by thermal oxidation of copper thin-films within few minutes, at atmospheric pressure. In this paper, thin films of copper oxide that were deposited by radio-frequency plasma enhanced reactive thermal evaporation of copper at room temperature, without any post-deposition annealing treatment, are studied. The deposition of good quality p-type semiconductor oxide to be used in the fabrication of p-TFTs is the purpose of this work. The thickness of the films varies from 97 up to 160 nm. The influence of rf power density on chemical, electrical and optical properties of the films was studied. Samples present conductivity within the range of 6 x 10-5 to 4 x 102 Ω-1.cm-1 (thermal activation energy in the interval 0.46 to 0.01 eV). The p-type conductivity of the films was confirmed by Seebeck effect in the more conductive samples. Surface composition obtained by XPS analysis was correlated with optical and electrical properties, showing that rf-power plays a main role in changes of material characteristics.
KW - rf-Plasma Enhanced Reactive Thermal Evaporation (rf-PERTE)
KW - Copper Oxide
KW - p -Type Thin-Films
U2 - 10.1166/jnn.2012.4556
DO - 10.1166/jnn.2012.4556
M3 - Article
C2 - 22962818
VL - 12
SP - 6754
EP - 6757
JO - Journal Of Nanoscience And Nanotechnology
JF - Journal Of Nanoscience And Nanotechnology
SN - 1533-4880
IS - 8
ER -