P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs

Pedro Barquinha; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins; Elvira Fortunato

doi:10.1889/1.3499958

P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs

Pedro Barquinha, Luís Pereira, Gonçalo Gonçalves, Rodrigo Martins, Elvira Fortunato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔV_{T0.5 V after 24h of 1_D=10 μA stress, quite promising for integration in electronic circuits.}

Original language	English
Title of host publication	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages	1376-1379
Number of pages	4
Volume	3
DOIs	https://doi.org/10.1889/1.3499958
Publication status	Published - 2010
Event	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States Duration: 23 May 2010 → 28 May 2010

Conference

Conference	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Country/Territory	United States
City	Seattle, WA
Period	23/05/10 → 28/05/10

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10.1889/1.3499958

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@inproceedings{1b2f01129e164b6cb1aba4b8380a34d2,

title = "P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs",

abstract = "Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.",

author = "Pedro Barquinha and Lu{\'i}s Pereira and Gon{\c c}alo Gon{\c c}alves and Rodrigo Martins and Elvira Fortunato",

year = "2010",

doi = "10.1889/1.3499958",

language = "English",

isbn = "9781618390950",

volume = "3",

pages = "1376--1379",

booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

note = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 ; Conference date: 23-05-2010 Through 28-05-2010",

}

Barquinha, P , Pereira, L , Gonçalves, G , Martins, R & Fortunato, E 2010, P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. vol. 3, pp. 1376-1379, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 23/05/10. https://doi.org/10.1889/1.3499958

TY - GEN

T1 - P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs

AU - Barquinha, Pedro

AU - Pereira, Luís

AU - Gonçalves, Gonçalo

AU - Martins, Rodrigo

AU - Fortunato, Elvira

PY - 2010

Y1 - 2010

N2 - Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.

AB - Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.

UR - http://www.scopus.com/inward/record.url?scp=79151474587&partnerID=8YFLogxK

U2 - 10.1889/1.3499958

DO - 10.1889/1.3499958

M3 - Conference contribution

AN - SCOPUS:79151474587

SN - 9781618390950

VL - 3

SP - 1376

EP - 1379

BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

T2 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs

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