P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1376-1379
Number of pages4
Volume3
DOIs
Publication statusPublished - 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

Conference

Conference48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period23/05/1028/05/10

Fingerprint

Dive into the research topics of 'P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs'. Together they form a unique fingerprint.

Cite this