Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔVT0.5 V after 24h of 1D=10 μA stress, quite promising for integration in electronic circuits.
|Title of host publication||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|
|Number of pages||4|
|Publication status||Published - 2010|
|Event||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
Duration: 23 May 2010 → 28 May 2010
|Conference||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|
|Period||23/05/10 → 28/05/10|