Abstract

Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta (ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies.

Original languageEnglish
Title of host publicationTechnological Innovation for Cyber-Physical Systems: Proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
EditorsL. M. Camarinha-Matos, A. J. Falcão , N. Vafaei , S. Najdi
Place of PublicationCham
PublisherSpringer
Pages533-541
Number of pages9
ISBN (Electronic)978-3-319-31165-4
ISBN (Print)978-3-319-31164-7
DOIs
Publication statusPublished - 2016
Event7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 - Costa de Caparica, Portugal
Duration: 11 Apr 201613 Apr 2016

Publication series

NameIFIP Advances in Information and Communication Technology
PublisherSpringer
Volume470
ISSN (Print)1868-4238

Conference

Conference7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016
Country/TerritoryPortugal
CityCosta de Caparica
Period11/04/1613/04/16

Keywords

  • ADCs
  • Amorphous oxide semiconductors
  • Circuit integration
  • IGZO TFTs
  • ΣΔ modulator

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