TY - JOUR
T1 - Oxide semiconductors: Order within the disorder
AU - Fortunato, Elvira Maria Correia
AU - Ferreira, Isabel Maria Mercês
AU - Barquinha, Pedro Miguel Cândido
AU - Martins, Rodrigo Ferrão de Paiva
AU - Pereira, Luis Miguel Nunes
PY - 2009/1/1
Y1 - 2009/1/1
N2 - The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14% in device areas of about 2.34 cm(2), whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with I(ON)/I(OFF) ratio exceeding 10(7), turn-on voltage below 1-2 V and saturation mobility above 25 cm(2) V(-1) s(-1). In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented.
AB - The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14% in device areas of about 2.34 cm(2), whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with I(ON)/I(OFF) ratio exceeding 10(7), turn-on voltage below 1-2 V and saturation mobility above 25 cm(2) V(-1) s(-1). In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented.
KW - ordered semiconductor
KW - solar cell
KW - oxide semiconductor
KW - disordered semiconductor
KW - thin-film transistor
U2 - 10.1080/14786430903022671
DO - 10.1080/14786430903022671
M3 - Article
SN - 1478-6435
VL - 89
SP - 2741
EP - 2758
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - SI28-30
ER -