The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14% in device areas of about 2.34 cm(2), whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with I(ON)/I(OFF) ratio exceeding 10(7), turn-on voltage below 1-2 V and saturation mobility above 25 cm(2) V(-1) s(-1). In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented.
Original languageUnknown
Pages (from-to)2741-2758
JournalPhilosophical Magazine
Issue numberSI28-30
Publication statusPublished - 1 Jan 2009

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