The aim of this work is to optimize the metal/silicon ratio on nickel metal induced crystallization of silicon. For this purpose amorphous silicon layers with 80, 125 and 220 nm thick were used on the top of which 0.5 nm of Ni was deposited and annealed during the required time to full crystallize the a-Si. The data show that the 80 nm a-Si layer reaches a crystalline fraction of 95.7% (as detected by spectroscopic ellipsometry) after annealed for only 2 hours. No significant structural improvement is detected by ellipsometry neither by XRD when annealing the films for longer times. However, on 125 nm thick samples, after annealing for 2 hours the crystalline fraction is only 59.7%, reaching a similar value to the one with 80 nm only after 5 hours, with a crystalline fraction of 92.2%. Here again no significant improvements were achieved by using longer annealing times. Finally, the 220 nm thick a-Si sample is completely crystallized only after 10 hours annealing. These data clear suggest that the crystallization of thicker a-Si layers requires thicker Ni films to be effective for short annealing times. A direct dependence of the crystallization time on the metal/silicon ratio was observed and estimated.
|Title of host publication||MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS|
|Number of pages||6|
|Publication status||Published - 1 Jan 2005|
|Event||Symposium on Materials, Integration and Technology for Monolithic Instruments held at the 2005 MRS Spring Meeting - |
Duration: 1 Jan 2005 → …
|Conference||Symposium on Materials, Integration and Technology for Monolithic Instruments held at the 2005 MRS Spring Meeting|
|Period||1/01/05 → …|