Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhancedp-i-nphotodiode with an nc-Sip-layer was also fabricated and characterized.
Original languageUnknown
Title of host publicationMaterials Research Society Symposium
Pages1153-A06-02
DOIs
Publication statusPublished - 1 Jan 2009
Event2009 MRS Spring Meeting -
Duration: 1 Jan 2009 → …

Conference

Conference2009 MRS Spring Meeting
Period1/01/09 → …

Cite this

@inproceedings{366628a286fe4bd8b5833d4a5e2faf74,
title = "Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes",
abstract = "We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1{\%}. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25{\%} at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhancedp-i-nphotodiode with an nc-Sip-layer was also fabricated and characterized.",
author = "{DEE Group Author} and Vieira, {Maria Manuela de Almeida Carvalho}",
year = "2009",
month = "1",
day = "1",
doi = "10.1557/PROC-1153-A06-02",
language = "Unknown",
pages = "1153--A06--02",
booktitle = "Materials Research Society Symposium",

}

DEE Group Author & Vieira, MMDAC 2009, Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes. in Materials Research Society Symposium. pp. 1153-A06-02, 2009 MRS Spring Meeting, 1/01/09. https://doi.org/10.1557/PROC-1153-A06-02

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes. / DEE Group Author ; Vieira, Maria Manuela de Almeida Carvalho.

Materials Research Society Symposium. 2009. p. 1153-A06-02.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

AU - DEE Group Author

AU - Vieira, Maria Manuela de Almeida Carvalho

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhancedp-i-nphotodiode with an nc-Sip-layer was also fabricated and characterized.

AB - We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhancedp-i-nphotodiode with an nc-Sip-layer was also fabricated and characterized.

U2 - 10.1557/PROC-1153-A06-02

DO - 10.1557/PROC-1153-A06-02

M3 - Conference contribution

SP - 1153-A06-02

BT - Materials Research Society Symposium

ER -