Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

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We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhancedp-i-nphotodiode with an nc-Sip-layer was also fabricated and characterized.
Original languageUnknown
Title of host publicationMaterials Research Society Symposium
Publication statusPublished - 1 Jan 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 14 Apr 200916 Apr 2009


Conference2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

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