Optical Transducers Based on Amorphous Si/SiC Photodiodes

Maria Manuela de Almeida Carvalho Vieira; DEE Group Author

doi:10.1007/978-3-642-19170-1_67

Optical Transducers Based on Amorphous Si/SiC Photodiodes

Maria Manuela de Almeida Carvalho Vieira, DEE Group Author

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

Original language	Unknown
Title of host publication	IFIP Advances in Information and Communication Technology
Editors	LM CamarinhaMatos
Publisher	Springer
Pages	604-611
Volume	349
ISBN (Print)	978-3-642-19170-1
DOIs	https://doi.org/10.1007/978-3-642-19170-1_67
Publication status	Published - 1 Jan 2011
Event	2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems - Costa da Caparica, Portugal Duration: 21 Feb 2011 → 23 Feb 2011

Conference

Conference	2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems
Country/Territory	Portugal
City	Costa da Caparica
Period	21/02/11 → 23/02/11

Access to Document

10.1007/978-3-642-19170-1_67

http://oa.uninova.pt/5205/

Cite this

@inproceedings{d8662b3c61314035b2f8ea7f595a0407,

title = "Optical Transducers Based on Amorphous Si/SiC Photodiodes",

abstract = "Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.",

keywords = "demultiplexer devices, optical amplifiers, image sensors, Amorphous Si/SiC photodiodes, photonic, optoelectronic",

author = "Vieira, {Maria Manuela de Almeida Carvalho} and {DEE Group Author}",

year = "2011",

month = jan,

day = "1",

doi = "10.1007/978-3-642-19170-1_67",

language = "Unknown",

isbn = "978-3-642-19170-1",

volume = "349",

pages = "604--611",

editor = "LM CamarinhaMatos",

booktitle = "IFIP Advances in Information and Communication Technology",

publisher = "Springer",

address = "Netherlands",

note = "2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems ; Conference date: 21-02-2011 Through 23-02-2011",

}

Vieira, MMDAC & DEE Group Author 2011, Optical Transducers Based on Amorphous Si/SiC Photodiodes. in LM CamarinhaMatos (ed.), IFIP Advances in Information and Communication Technology. vol. 349, Springer, pp. 604-611, 2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, Costa da Caparica, Portugal, 21/02/11. https://doi.org/10.1007/978-3-642-19170-1_67

TY - GEN

T1 - Optical Transducers Based on Amorphous Si/SiC Photodiodes

AU - Vieira, Maria Manuela de Almeida Carvalho

AU - DEE Group Author

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

AB - Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

KW - demultiplexer devices

KW - optical amplifiers

KW - image sensors

KW - Amorphous Si/SiC photodiodes

KW - photonic

KW - optoelectronic

U2 - 10.1007/978-3-642-19170-1_67

DO - 10.1007/978-3-642-19170-1_67

M3 - Conference contribution

SN - 978-3-642-19170-1

VL - 349

SP - 604

EP - 611

BT - IFIP Advances in Information and Communication Technology

A2 - CamarinhaMatos, LM

PB - Springer

T2 - 2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems

Y2 - 21 February 2011 through 23 February 2011

ER -