Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.
|Title of host publication||IFIP Advances in Information and Communication Technology|
|Publication status||Published - 1 Jan 2011|
|Event||2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems - Costa da Caparica, Portugal|
Duration: 21 Feb 2011 → 23 Feb 2011
|Conference||2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems|
|City||Costa da Caparica|
|Period||21/02/11 → 23/02/11|