Optical processing devices based on multilayered a-SiC

H p-i-n structures for short range optical communications

P. Louro, M. A. Vieira, M. Vieira, J. Costa, M. Fernandes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengthdivision demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analyzed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field; however other applications are also foreseen, like optical signal amplification or sensing as the information of each input channel can be assigned to a measurement signal.

Original languageEnglish
Title of host publicationProceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010
Pages146-150
Number of pages5
DOIs
Publication statusPublished - 1 Dec 2010
Event1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010 - Venice, Italy
Duration: 18 Jul 201025 Jul 2010

Conference

Conference1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010
CountryItaly
CityVenice
Period18/07/1025/07/10

Fingerprint

Demultiplexing
Optical communication
Photocurrents
Heterojunctions
Processing
ITO glass
Amplification
Demonstrations
Recovery
Wavelength
Computer simulation
Electric potential

Keywords

  • Optical communications
  • Optical sensors
  • Wavelength division multiplexing-demultiplexing
  • Electrical models
  • Heterostructures
  • a-SiC:H
  • Application fields
  • Applied bias
  • Applied voltages
  • Device functionality
  • Device operations
  • Electrical bias

Cite this

Louro, P., Vieira, M. A., Vieira, M., Costa, J., & Fernandes, M. (2010). Optical processing devices based on multilayered a-SiC: H p-i-n structures for short range optical communications. In Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010 (pp. 146-150). [5632126] https://doi.org/10.1109/SENSORDEVICES.2010.34
Louro, P. ; Vieira, M. A. ; Vieira, M. ; Costa, J. ; Fernandes, M. / Optical processing devices based on multilayered a-SiC : H p-i-n structures for short range optical communications. Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010. 2010. pp. 146-150
@inproceedings{ae8c10afb62e4a9d99a7dc373c77bc1d,
title = "Optical processing devices based on multilayered a-SiC: H p-i-n structures for short range optical communications",
abstract = "In this paper, we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengthdivision demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analyzed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field; however other applications are also foreseen, like optical signal amplification or sensing as the information of each input channel can be assigned to a measurement signal.",
keywords = "Optical communications, Optical sensors, Wavelength division multiplexing-demultiplexing, Electrical models, Heterostructures, a-SiC:H, Application fields, Applied bias, Applied voltages, Device functionality, Device operations, Electrical bias",
author = "P. Louro and Vieira, {M. A.} and M. Vieira and J. Costa and M. Fernandes",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/SENSORDEVICES.2010.34",
language = "English",
isbn = "9780769540948",
pages = "146--150",
booktitle = "Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010",

}

Louro, P, Vieira, MA, Vieira, M, Costa, J & Fernandes, M 2010, Optical processing devices based on multilayered a-SiC: H p-i-n structures for short range optical communications. in Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010., 5632126, pp. 146-150, 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010, Venice, Italy, 18/07/10. https://doi.org/10.1109/SENSORDEVICES.2010.34

Optical processing devices based on multilayered a-SiC : H p-i-n structures for short range optical communications. / Louro, P.; Vieira, M. A.; Vieira, M.; Costa, J.; Fernandes, M.

Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010. 2010. p. 146-150 5632126.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Optical processing devices based on multilayered a-SiC

T2 - H p-i-n structures for short range optical communications

AU - Louro, P.

AU - Vieira, M. A.

AU - Vieira, M.

AU - Costa, J.

AU - Fernandes, M.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - In this paper, we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengthdivision demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analyzed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field; however other applications are also foreseen, like optical signal amplification or sensing as the information of each input channel can be assigned to a measurement signal.

AB - In this paper, we present results on the use of a multilayered a-SiC:H heterostructure as a wavelengthdivision demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analyzed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field; however other applications are also foreseen, like optical signal amplification or sensing as the information of each input channel can be assigned to a measurement signal.

KW - Optical communications

KW - Optical sensors

KW - Wavelength division multiplexing-demultiplexing

KW - Electrical models

KW - Heterostructures

KW - a-SiC:H

KW - Application fields

KW - Applied bias

KW - Applied voltages

KW - Device functionality

KW - Device operations

KW - Electrical bias

UR - http://www.scopus.com/inward/record.url?scp=79951874639&partnerID=8YFLogxK

U2 - 10.1109/SENSORDEVICES.2010.34

DO - 10.1109/SENSORDEVICES.2010.34

M3 - Conference contribution

SN - 9780769540948

SP - 146

EP - 150

BT - Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010

ER -

Louro P, Vieira MA, Vieira M, Costa J, Fernandes M. Optical processing devices based on multilayered a-SiC: H p-i-n structures for short range optical communications. In Proceedings - 1st International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2010. 2010. p. 146-150. 5632126 https://doi.org/10.1109/SENSORDEVICES.2010.34