Optical and photoconductive properties of indium sulfide fluoride thin films

Y. Vygranenko, M. Vieira, G. Lavareda, C. Nunes de Carvalho, P. Brogueira, A. Amaral, N. P. Barradas, E. Alves

Research output: Contribution to journalConference article

Abstract

This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (~700 MΩ-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalTHIN SOLID FILMS
Volume671
DOIs
Publication statusPublished - 1 Feb 2019
EventEuropean Materials Research Society (EMRS) Spring Meeting / Sympsium A on Thin Film Chalcogenide Photovoltaic Materials (ChalcogenidePV) - Strasbourg, France
Duration: 18 Jun 201822 Jun 2018

Fingerprint

Indium sulfide
indium sulfides
Fluorides
fluorides
Photoconductivity
photoconductivity
optical properties
Thin films
Silicon
thin films
Semiconducting indium
Substrates
Plasmas
Indium
Thermal evaporation
Rutherford backscattering spectroscopy
silicon
Buffer layers
Fused silica
optical measurement

Keywords

  • Amorphous semiconductors
  • Indium sulfide fluoride
  • Optical properties
  • Photoconductivity
  • Photovoltaics
  • Thin-films

Cite this

Vygranenko, Y. ; Vieira, M. ; Lavareda, G. ; Nunes de Carvalho, C. ; Brogueira, P. ; Amaral, A. ; Barradas, N. P. ; Alves, E. / Optical and photoconductive properties of indium sulfide fluoride thin films. In: THIN SOLID FILMS. 2019 ; Vol. 671. pp. 49-52.
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abstract = "This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (~700 MΩ-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.",
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Optical and photoconductive properties of indium sulfide fluoride thin films. / Vygranenko, Y.; Vieira, M.; Lavareda, G.; Nunes de Carvalho, C.; Brogueira, P.; Amaral, A.; Barradas, N. P.; Alves, E.

In: THIN SOLID FILMS, Vol. 671, 01.02.2019, p. 49-52.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optical and photoconductive properties of indium sulfide fluoride thin films

AU - Vygranenko, Y.

AU - Vieira, M.

AU - Lavareda, G.

AU - Nunes de Carvalho, C.

AU - Brogueira, P.

AU - Amaral, A.

AU - Barradas, N. P.

AU - Alves, E.

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PY - 2019/2/1

Y1 - 2019/2/1

N2 - This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (~700 MΩ-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.

AB - This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (~700 MΩ-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.

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