Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.
Original languageEnglish
Title of host publicationAdvanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM
EditorsAT Marques, AF Silva, APM Baptista, C Sa, F Alves, LF Malheiros, M Vieira
Place of PublicationZurich, Switzerland
PublisherTrans Tech Publications Ltd
Pages308-312
Volume587-588
DOIs
Publication statusPublished - 2008
Event13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium - Oporto, Portugal
Duration: 1 Apr 20074 Apr 2007

Publication series

NameMaterials Science Forum
PublisherTrans Tech Publications Ltd
Volume587-588
ISSN (Print)0255-5476

Conference

Conference13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium
CountryPortugal
CityOporto
Period1/04/074/04/07

Keywords

  • a-Si:H
  • Ellipsometry
  • FTIR
  • Porous silicon

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