In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.
|Name||Materials Science Forum|
|Publisher||Trans Tech Publications Ltd|
|Conference||13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium|
|Period||1/04/07 → 4/04/07|
- Porous silicon