@inproceedings{ee854eb5997d46919e5cdb224c529d01,
title = "Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique",
abstract = "In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.",
keywords = "FTIR, Porous silicon, a-Si:H, Ellipsometry, a-Si:H, Ellipsometry, FTIR, Porous silicon",
author = "R. Prabakaran and Hugo Aguas and Pereira, {Luis Miguel Nunes} and Elamurugu Elangovan and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Ferreira, {Isabel Maria Merc{\^e}s}",
note = "Sem PDF. One of the authors (R.P) thanks Portuguese Foundation of Science and Technology for the postdoctoral fellowship [SFRH / BPD / 20674 / 2004].; 13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium ; Conference date: 01-04-2007 Through 04-04-2007",
year = "2008",
doi = "10.4028/www.scientific.net/MSF.587-588.308",
language = "English",
volume = "587-588",
series = "Materials Science Forum",
publisher = "Trans Tech Publications",
pages = "308--312",
editor = "AT Marques and AF Silva and APM Baptista and C Sa and F Alves and LF Malheiros and M Vieira",
booktitle = "Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM",
address = "Germany",
}