Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.
Original languageEnglish
Title of host publicationAdvanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM
EditorsAT Marques, AF Silva, APM Baptista, C Sa, F Alves, LF Malheiros, M Vieira
Place of PublicationZurich, Switzerland
PublisherTrans Tech Publications Ltd
Pages308-312
Volume587-588
DOIs
Publication statusPublished - 2008
Event13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium - Oporto, Portugal
Duration: 1 Apr 20074 Apr 2007

Publication series

NameMaterials Science Forum
PublisherTrans Tech Publications Ltd
Volume587-588
ISSN (Print)0255-5476

Conference

Conference13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium
CountryPortugal
CityOporto
Period1/04/074/04/07

Fingerprint

porous silicon
current density
low currents
ellipsometry
high current
coatings
oxides
augmentation
approximation
electronics

Keywords

  • a-Si:H
  • Ellipsometry
  • FTIR
  • Porous silicon

Cite this

Prabakaran, R., Aguas, H., Pereira, L. M. N., Elangovan, E., Fortunato, E. M. C., Martins, R. F. D. P., & Ferreira, I. M. M. (2008). Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique. In AT. Marques, AF. Silva, APM. Baptista, C. Sa, F. Alves, LF. Malheiros, & M. Vieira (Eds.), Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM (Vol. 587-588, pp. 308-312). (Materials Science Forum; Vol. 587-588). Zurich, Switzerland: Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.587-588.308
Prabakaran, R. ; Aguas, Hugo ; Pereira, Luis Miguel Nunes ; Elangovan, Elamurugu ; Fortunato, Elvira Maria Correia ; Martins, Rodrigo Ferrão de Paiva ; Ferreira, Isabel Maria Mercês. / Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique. Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM. editor / AT Marques ; AF Silva ; APM Baptista ; C Sa ; F Alves ; LF Malheiros ; M Vieira. Vol. 587-588 Zurich, Switzerland : Trans Tech Publications Ltd, 2008. pp. 308-312 (Materials Science Forum).
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abstract = "In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.",
keywords = "FTIR, Porous silicon, a-Si:H, Ellipsometry, a-Si:H, Ellipsometry, FTIR, Porous silicon",
author = "R. Prabakaran and Hugo Aguas and Pereira, {Luis Miguel Nunes} and Elamurugu Elangovan and Fortunato, {Elvira Maria Correia} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Ferreira, {Isabel Maria Merc{\^e}s}",
note = "Sem PDF. One of the authors (R.P) thanks Portuguese Foundation of Science and Technology for the postdoctoral fellowship [SFRH / BPD / 20674 / 2004].",
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editor = "AT Marques and AF Silva and APM Baptista and C Sa and F Alves and LF Malheiros and M Vieira",
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Prabakaran, R, Aguas, H, Pereira, LMN, Elangovan, E, Fortunato, EMC, Martins, RFDP & Ferreira, IMM 2008, Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique. in AT Marques, AF Silva, APM Baptista, C Sa, F Alves, LF Malheiros & M Vieira (eds), Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM. vol. 587-588, Materials Science Forum, vol. 587-588, Trans Tech Publications Ltd, Zurich, Switzerland, pp. 308-312, 13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium, Oporto, Portugal, 1/04/07. https://doi.org/10.4028/www.scientific.net/MSF.587-588.308

Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique. / Prabakaran, R.; Aguas, Hugo; Pereira, Luis Miguel Nunes; Elangovan, Elamurugu; Fortunato, Elvira Maria Correia; Martins, Rodrigo Ferrão de Paiva; Ferreira, Isabel Maria Mercês.

Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM. ed. / AT Marques; AF Silva; APM Baptista; C Sa; F Alves; LF Malheiros; M Vieira. Vol. 587-588 Zurich, Switzerland : Trans Tech Publications Ltd, 2008. p. 308-312 (Materials Science Forum; Vol. 587-588).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique

AU - Prabakaran, R.

AU - Aguas, Hugo

AU - Pereira, Luis Miguel Nunes

AU - Elangovan, Elamurugu

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

AU - Ferreira, Isabel Maria Mercês

N1 - Sem PDF. One of the authors (R.P) thanks Portuguese Foundation of Science and Technology for the postdoctoral fellowship [SFRH / BPD / 20674 / 2004].

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AB - In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm(2)) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-O-x) layer with current density and the improvement of the Si-H, band after a-Si:H coating.

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KW - a-Si:H

KW - Ellipsometry

KW - a-Si:H

KW - Ellipsometry

KW - FTIR

KW - Porous silicon

U2 - 10.4028/www.scientific.net/MSF.587-588.308

DO - 10.4028/www.scientific.net/MSF.587-588.308

M3 - Conference contribution

VL - 587-588

T3 - Materials Science Forum

SP - 308

EP - 312

BT - Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM

A2 - Marques, AT

A2 - Silva, AF

A2 - Baptista, APM

A2 - Sa, C

A2 - Alves, F

A2 - Malheiros, LF

A2 - Vieira, M

PB - Trans Tech Publications Ltd

CY - Zurich, Switzerland

ER -

Prabakaran R, Aguas H, Pereira LMN, Elangovan E, Fortunato EMC, Martins RFDP et al. Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique. In Marques AT, Silva AF, Baptista APM, Sa C, Alves F, Malheiros LF, Vieira M, editors, Advanced Materials Forum IV - Selected, peer reviewed papers from the 4th International Materials Symposium Materiais 2007 and 8th Encontro da Sociedade Portuguesa de Materiais - SPM. Vol. 587-588. Zurich, Switzerland: Trans Tech Publications Ltd. 2008. p. 308-312. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.587-588.308