P- and n-type weakly absorbing highly conductive (σ>0·1Ω-1 cm-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a two-consecutive-decomposition-deposition-chamber reactor. These films are composed of Si microcrystals (δ = 50-100 Å) embedded in an amorphous Si:0:C:H matrix, with concentrations up to 25at.%O and 20at.%C. From diffraction studies there is no evidence for the presence of SiC crystallites. Electrical conduction appears to be in extended states via percolation channels through Si crystallites of sufficient volume fraction.
|Number of pages||8|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|Publication status||Published - 1991|