On the a-Si:H film growth: The role of the powder formation

A. Maçarico, M. Vieira, A. Fantoni, P. Louro, A. Sêco, R. Martins, C. Hollenstein

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Results are presented which are geared towards an understanding of the influence of powder formation during film growth. Plasma chemistry is correlated with the morphology, structure (inferred through infrared spectroscopy, scanning electron microscopy and X-ray diffraction) electro-optical and density of states of intrinsic films deposited under continuous and power modulated operation. Results show that for modulation frequencies where no powder formation occurs and low substrate temperatures T (150°C), silane decomposition gives rise to the growth of inhomogeneous films while in the high modulation frequency regime, at the same temperature, the anions and powder are trapped resulting in films with high deposition rates and low defect density.

Original languageEnglish
Pages (from-to)1207-1211
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 2
DOIs
Publication statusPublished - May 1996
Event16th International Conference on Amorphous Semiconductors - Science and Technology (ICAS 16) - Kobe, Japan
Duration: 4 Sep 19958 Sep 1995

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