Abstract
Compared to conventional technologies, the superior electrical characteristics of III-V Tunnel FET (TFET) devices can highly improve the process of energy harvesting conversion at ultra-low input voltage operation (sub-0.25V). In order to extend the input voltage/power range of operation in conventional charge pump topologies with TFET devices, it is of the major importance to reduce the band-to-band tunneling current when the transistor is under reverse bias conditions. This paper proposes a new charge pump topology with TFET devices that attenuate the reverse losses, thus improving the power conversion efficiency (PCE) in a broader range of input voltage values and output loads. It is shown by simulations that compared with the conventional gate cross-coupled charge pump and considering an input voltage of 640 mV, the proposed topology reduces the reverse losses from 19 % to 1 %, for an output current of 10 μA. For this case, the PCE increased from 63 % to 83 %.
Original language | English |
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Title of host publication | IEEE 58th International Midwest Symposium on Circuits and Systems |
Subtitle of host publication | Climbing to New Heights, MWSCAS 2015 - Conference Proceedings |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Volume | 2015-September |
ISBN (Electronic) | 978-1-4673-6557-4 |
DOIs | |
Publication status | Published - 28 Sept 2015 |
Event | 58th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2015 - Fort Collins, United States Duration: 2 Aug 2015 → 5 Aug 2015 |
Conference
Conference | 58th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2015 |
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Country/Territory | United States |
City | Fort Collins |
Period | 2/08/15 → 5/08/15 |
Keywords
- Charge Pump
- Energy Harvesting
- Switched-Capacitor
- Thermo-generator
- Tunnel FET
- Ultra-Low Power