New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

Elvira Maria Correia Fortunato; Alexandra Gonçalves; A Marques; Ana S. Viana; Hugo Aguas; Luis Miguel Nunes Pereira; Isabel  Ferreira; Paula Vilarinho; Rodrigo Ferrão de Paiva Martins

doi:10.1016/j.surfcoat.2003.10.025

New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

Elvira Maria Correia Fortunato, Alexandra Gonçalves, A Marques, Ana S. Viana, Hugo Aguas, Luis Miguel Nunes Pereira, Isabel Ferreira, Paula Vilarinho, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film.

Original language	English
Pages (from-to)	20-25
Number of pages	6
Journal	Surface & Coatings Technology
Volume	180-181
Issue number	NA
DOIs	https://doi.org/10.1016/j.surfcoat.2003.10.025
Publication status	Published - 1 Mar 2004

Keywords

Zinc oxid
doped zinc
Optical films

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10.1016/j.surfcoat.2003.10.025

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title = "New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering",

abstract = "Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film.",

keywords = "zinc oxide, gallium, thin film, transparent conductive oxide, polymeric substrates, r.f. magnetron sputtering, Zinc oxid, doped zinc, Optical films",

author = "Fortunato, {Elvira Maria Correia} and Alexandra Gon{\c c}alves and A Marques and Viana, {Ana S.} and Hugo Aguas and Pereira, {Luis Miguel Nunes} and Isabel Ferreira and Paula Vilarinho and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2004",

month = mar,

day = "1",

doi = "10.1016/j.surfcoat.2003.10.025",

language = "English",

volume = "180-181",

pages = "20--25",

journal = "Surface & Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier Science B.V., Amsterdam.",

number = "NA",

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TY - JOUR

T1 - New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

AU - Fortunato, Elvira Maria Correia

AU - Gonçalves, Alexandra

AU - Marques, A

AU - Viana, Ana S.

AU - Aguas, Hugo

AU - Pereira, Luis Miguel Nunes

AU - Ferreira, Isabel

AU - Vilarinho, Paula

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film.

AB - Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film.

KW - zinc oxide

KW - gallium

KW - thin film

KW - transparent conductive oxide

KW - polymeric substrates

KW - r.f. magnetron sputtering

KW - Zinc oxid

KW - doped zinc

KW - Optical films

U2 - 10.1016/j.surfcoat.2003.10.025

DO - 10.1016/j.surfcoat.2003.10.025

M3 - Article

SN - 0257-8972

VL - 180-181

SP - 20

EP - 25

JO - Surface & Coatings Technology

JF - Surface & Coatings Technology

IS - NA

ER -

New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

Abstract

Keywords

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