New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering

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Abstract

Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average.

Original languageEnglish
Pages (from-to)102-106
Number of pages5
JournalThin Solid Films
Volume442
Issue number1-2
DOIs
Publication statusPublished - 1 Oct 2003

Keywords

  • Electrical properties and measurements
  • Optical properties
  • Sputtering
  • Zinc oxide

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