New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering

Vitor Assunção; Elvira Fortunato; António Marques; Alexandra Gonçalves; Isabel Ferreira; Hugo Águas; Rodrigo Martins

doi:10.1016/S0040-6090(03)00955-6

New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering

Vitor Assunção, Elvira Fortunato, António Marques, Alexandra Gonçalves, Isabel Ferreira, Hugo Águas, Rodrigo Martins

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10^-4 Ω cm, a Hall mobility of 18 cm²/Vs and a carrier concentration of 1.3 × 10²¹ cm^-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average.

Original language	English
Pages (from-to)	102-106
Number of pages	5
Journal	Thin Solid Films
Volume	442
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00955-6
Publication status	Published - 1 Oct 2003

Keywords

Electrical properties and measurements
Optical properties
Sputtering
Zinc oxide

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10.1016/S0040-6090(03)00955-6

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abstract = "Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average.",

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AU - Assunção, Vitor

AU - Fortunato, Elvira

AU - Marques, António

AU - Gonçalves, Alexandra

AU - Ferreira, Isabel

AU - Águas, Hugo

AU - Martins, Rodrigo

PY - 2003/10/1

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N2 - Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average.

AB - Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 × 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average.

KW - Electrical properties and measurements

KW - Optical properties

KW - Sputtering

KW - Zinc oxide

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New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering

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Keywords

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