New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

E. Fortunato; Pedro Miguel Cândido Barquinha; G Gonçalves; Luis Miguel Nunes Pereira; Rodrigo Ferrão de Paiva Martins

doi:10.4028/www.scientific.net/MSF.587-588.348

New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

E. Fortunato, Pedro Miguel Cândido Barquinha, G Gonçalves, Luis Miguel Nunes Pereira, Rodrigo Ferrão de Paiva Martins

DCM - Departamento de Ciência dos Materiais

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor; for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a love threshold voltage, opens new doors for applications in flexible. wearable, disposable portable electronics as well as battery-powered applications.

Original language	English
Title of host publication	Materials Science Forum
Pages	348-352
Number of pages	5
Volume	587-588
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.587-588.348
Publication status	Published - 1 Jan 2008
Event	13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium - Oporto, Portugal Duration: 1 Apr 2007 → 4 Apr 2007

Conference

Conference	13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium
Country/Territory	Portugal
City	Oporto
Period	1/04/07 → 4/04/07

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Cite this

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title = "New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)",

abstract = "Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor; for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a love threshold voltage, opens new doors for applications in flexible. wearable, disposable portable electronics as well as battery-powered applications.",

keywords = "Thin Film Transistors - TFTs, amorphous oxide semiconductors, electronic devices",

author = "E. Fortunato and Barquinha, {Pedro Miguel C{\^a}ndido} and G Gon{\c c}alves and Pereira, {Luis Miguel Nunes} and Martins, {Rodrigo Ferr{\~a}o de Paiva}",

year = "2008",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/MSF.587-588.348",

language = "English",

volume = "587-588",

pages = "348--352",

booktitle = "Materials Science Forum",

note = "13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium ; Conference date: 01-04-2007 Through 04-04-2007",

}

Fortunato, E , Barquinha, PMC, Gonçalves, G, Pereira, LMN & Martins, RFDP 2008, New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs). in Materials Science Forum. vol. 587-588, pp. 348-352, 13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium, Oporto, Portugal, 1/04/07. https://doi.org/10.4028/www.scientific.net/MSF.587-588.348

TY - GEN

T1 - New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

AU - Fortunato, E.

AU - Barquinha, Pedro Miguel Cândido

AU - Gonçalves, G

AU - Pereira, Luis Miguel Nunes

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor; for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a love threshold voltage, opens new doors for applications in flexible. wearable, disposable portable electronics as well as battery-powered applications.

AB - Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor; for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a love threshold voltage, opens new doors for applications in flexible. wearable, disposable portable electronics as well as battery-powered applications.

KW - Thin Film Transistors - TFTs

KW - amorphous oxide semiconductors

KW - electronic devices

U2 - 10.4028/www.scientific.net/MSF.587-588.348

DO - 10.4028/www.scientific.net/MSF.587-588.348

M3 - Conference contribution

VL - 587-588

SP - 348

EP - 352

BT - Materials Science Forum

T2 - 13th Conference of the Sociedade Portuguesa de Materiais/4th International Materials Symposium

Y2 - 1 April 2007 through 4 April 2007

ER -

New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

Abstract

Conference

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