Negative ion formation through dissociative electron attachment to GeH4: Comparative studies with CH4 and SiH4

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Abstract

Negative ion formation by low-energy electron impact to germane (GeH 4) has been performed in an electron energy region from 6 to 11 eV with an energy resolution of ∼500 meV. Anion efficiency curves of four anions have been measured. Product anions are observed mainly in the 6-11 eV energy region, yielding GeHx- (x = 0-3). Comparative studies with methane (CH4) and silane (SiH4) are also presented with the most intense signals observed at 14 amu (CH2 -), 31 amu (SiH3-) and 75 amu (GeH 3-) from CH4, SiH4 and GeH 4, respectively. Fragmentation into these negative ions is attributed to resonant dissociative electron attachment processes.
Original languageEnglish
Pages (from-to)51-56
Number of pages6
JournalInternational Journal of Mass Spectrometry
Volume306
Issue number1
DOIs
Publication statusPublished - 1 Jan 2011

Keywords

  • Silane (SiH4)
  • CVD and plasma etching
  • Dissociative electron attachment
  • Germane (GeH 4)
  • Methane (CH4)
  • Negative ion formation

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