Negative ion formation through dissociative electron attachment to GeH4: Comparative studies with CH4 and SiH4

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Negative ion formation by low-energy electron impact to germane (GeH 4) has been performed in an electron energy region from 6 to 11 eV with an energy resolution of ∼500 meV. Anion efficiency curves of four anions have been measured. Product anions are observed mainly in the 6-11 eV energy region, yielding GeHx- (x = 0-3). Comparative studies with methane (CH4) and silane (SiH4) are also presented with the most intense signals observed at 14 amu (CH2 -), 31 amu (SiH3-) and 75 amu (GeH 3-) from CH4, SiH4 and GeH 4, respectively. Fragmentation into these negative ions is attributed to resonant dissociative electron attachment processes.
Original languageEnglish
Pages (from-to)51-56
Number of pages6
JournalInternational Journal of Mass Spectrometry
Volume306
Issue number1
DOIs
Publication statusPublished - 1 Jan 2011

Fingerprint

electron attachment
negative ions
Anions
Negative ions
anions
Electrons
Silanes
Methane
silanes
electron impact
energy
fragmentation
methane
electron energy
curves
products

Keywords

  • Silane (SiH4)
  • CVD and plasma etching
  • Dissociative electron attachment
  • Germane (GeH 4)
  • Methane (CH4)
  • Negative ion formation

Cite this

@article{f45d77842dd24d98ba416d29a76203e4,
title = "Negative ion formation through dissociative electron attachment to GeH4: Comparative studies with CH4 and SiH4",
abstract = "Negative ion formation by low-energy electron impact to germane (GeH 4) has been performed in an electron energy region from 6 to 11 eV with an energy resolution of ∼500 meV. Anion efficiency curves of four anions have been measured. Product anions are observed mainly in the 6-11 eV energy region, yielding GeHx- (x = 0-3). Comparative studies with methane (CH4) and silane (SiH4) are also presented with the most intense signals observed at 14 amu (CH2 -), 31 amu (SiH3-) and 75 amu (GeH 3-) from CH4, SiH4 and GeH 4, respectively. Fragmentation into these negative ions is attributed to resonant dissociative electron attachment processes.",
keywords = "CVD and plasma etching, Silane (SiH4), Germane (GeH4), Negative ion formation, Methane (CH4), Dissociative electron attachment, Silane (SiH4), CVD and plasma etching, Dissociative electron attachment, Germane (GeH 4), Methane (CH4), Negative ion formation",
author = "Masamitsu Hoshino and Stefan Matejcik and Nunes, {Yuri Fonseca da Silva} and {da Silva}, FF and Lim{\~a}o-vieira, {Paulo Manuel Assis Loureiro}",
year = "2011",
month = "1",
day = "1",
doi = "10.1016/j.ijms.2011.06.009",
language = "English",
volume = "306",
pages = "51--56",
journal = "International Journal of Mass Spectrometry",
issn = "1387-3806",
publisher = "Elsevier Science B.V., Amsterdam.",
number = "1",

}

TY - JOUR

T1 - Negative ion formation through dissociative electron attachment to GeH4: Comparative studies with CH4 and SiH4

AU - Hoshino, Masamitsu

AU - Matejcik, Stefan

AU - Nunes, Yuri Fonseca da Silva

AU - da Silva, FF

AU - Limão-vieira, Paulo Manuel Assis Loureiro

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Negative ion formation by low-energy electron impact to germane (GeH 4) has been performed in an electron energy region from 6 to 11 eV with an energy resolution of ∼500 meV. Anion efficiency curves of four anions have been measured. Product anions are observed mainly in the 6-11 eV energy region, yielding GeHx- (x = 0-3). Comparative studies with methane (CH4) and silane (SiH4) are also presented with the most intense signals observed at 14 amu (CH2 -), 31 amu (SiH3-) and 75 amu (GeH 3-) from CH4, SiH4 and GeH 4, respectively. Fragmentation into these negative ions is attributed to resonant dissociative electron attachment processes.

AB - Negative ion formation by low-energy electron impact to germane (GeH 4) has been performed in an electron energy region from 6 to 11 eV with an energy resolution of ∼500 meV. Anion efficiency curves of four anions have been measured. Product anions are observed mainly in the 6-11 eV energy region, yielding GeHx- (x = 0-3). Comparative studies with methane (CH4) and silane (SiH4) are also presented with the most intense signals observed at 14 amu (CH2 -), 31 amu (SiH3-) and 75 amu (GeH 3-) from CH4, SiH4 and GeH 4, respectively. Fragmentation into these negative ions is attributed to resonant dissociative electron attachment processes.

KW - CVD and plasma etching

KW - Silane (SiH4)

KW - Germane (GeH4)

KW - Negative ion formation

KW - Methane (CH4)

KW - Dissociative electron attachment

KW - Silane (SiH4)

KW - CVD and plasma etching

KW - Dissociative electron attachment

KW - Germane (GeH 4)

KW - Methane (CH4)

KW - Negative ion formation

UR - http://www.scopus.com/record/display.uri?eid=2-s2.0-80051905942&origin=resultslist&sort=plf-f&src=s&st1

U2 - 10.1016/j.ijms.2011.06.009

DO - 10.1016/j.ijms.2011.06.009

M3 - Article

VL - 306

SP - 51

EP - 56

JO - International Journal of Mass Spectrometry

JF - International Journal of Mass Spectrometry

SN - 1387-3806

IS - 1

ER -