TY - JOUR
T1 - Nanostructured silicon and its application to solar cells, position sensors and thin film transistors
AU - Fortunato, Elvira Maria Correia
AU - Ferreira, Isabel Maria Mercês
AU - Águas, Hugo Manuel Brito
AU - Martins, Rodrigo Ferrão de Paiva
AU - Pereira, Luis Miguel Nunes
PY - 2009/1/1
Y1 - 2009/1/1
N2 - This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 901 p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm(2)/V/s, threshold voltage of 2V, on/off ratio larger than 10(7) and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device.
AB - This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 901 p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm(2)/V/s, threshold voltage of 2V, on/off ratio larger than 10(7) and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device.
KW - position sensitive detectors
KW - nanostructured silicon
KW - TFTs
KW - thin film devices
KW - solar cells
U2 - 10.1080/14786430902886910
DO - 10.1080/14786430902886910
M3 - Article
SN - 1478-6435
VL - 89
SP - 2699
EP - 2721
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - SI28-30
ER -