Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique

I. M M Ferreira; Rodrigo Ferrão de Paiva Martins; A. M F Cabrita; E. M C Fortunato; P. Vilarinho

Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique

I. M M Ferreira, Rodrigo Ferrão de Paiva Martins, A. M F Cabrita, E. M C Fortunato, P. Vilarinho

DCM - Departamento de Ciência dos Materiais

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm^-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.

Original language	English
Pages (from-to)	A2241-A2246
Number of pages	6
Journal	MRS Proceedings
Volume	609
Publication status	Published - 2000

Access to Document

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique'. Together they form a unique fingerprint.

Cite this

@article{e89925997335468b9c7113a08477a600,

title = "Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique",

abstract = "In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.",

author = "Ferreira, {I. M M} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Cabrita, {A. M F} and Fortunato, {E. M C} and P. Vilarinho",

year = "2000",

language = "English",

volume = "609",

pages = "A2241--A2246",

journal = "MRS Proceedings",

}

TY - JOUR

T1 - Nanocrystalline undoped silicon films produce by hot wire plasma assisted technique

AU - Ferreira, I. M M

AU - Martins, Rodrigo Ferrão de Paiva

AU - Cabrita, A. M F

AU - Fortunato, E. M C

AU - Vilarinho, P.

PY - 2000

Y1 - 2000

N2 - In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.

AB - In this work, we show results concerning electro-optical properties, composition and morphology of nanocrystalline hydrogenated undoped silicon (nc-Si:H) films produced by hot wire plasma assisted chemical vapour deposition process (HWPA-CVD) and exhibiting a compact granular structure, as revealed by SEM micrographs. This was also inferred by infrared spectra, which does not present the SiO vibration band located at 1050-1200 cm-1, even when samples have long atmospheric exposition. The photoconductivity measured at room temperature also does not change when samples have a long time exposition to the air or to the light irradiation. The influence of hydrogen dilution on the properties of the films was also investigated.

UR - http://www.scopus.com/inward/record.url?scp=0034429772&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034429772

VL - 609

SP - A2241-A2246

JO - MRS Proceedings

JF - MRS Proceedings

ER -