Nanocrystalline thin film silicon solar cells

A deeper look into p/i interface formation

Andriy Lyubchyk, Sergej Alexandrovich Filonovich, Tiago Mateus, Manuel João Mendes, António Vicente, Joaquim Pratas Leitão, Bruno Poças Falcão, Elvira Fortunato, Hugo Águas, Rodrigo Martins

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions.

Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalTHIN SOLID FILMS
Volume591
Issue numberPart A
DOIs
Publication statusPublished - 30 Sep 2015

Fingerprint

Silicon solar cells
Ion bombardment
solar cells
bombardment
thin films
Heavy Ions
Solar cells
Heavy ions
light ions
Nanocrystalline silicon
Silanes
Spectroscopic ellipsometry
Amorphization
heavy ions
Buffer layers
Plasma enhanced chemical vapor deposition
Deposition rates
Conversion efficiency
Thin film solar cells
Hydrogen

Keywords

  • Buffer layer
  • Ion bombardment
  • Nanocrystalline silicon
  • p/i interface
  • Thin film solar cells

Cite this

Lyubchyk, Andriy ; Filonovich, Sergej Alexandrovich ; Mateus, Tiago ; Mendes, Manuel João ; Vicente, António ; Leitão, Joaquim Pratas ; Falcão, Bruno Poças ; Fortunato, Elvira ; Águas, Hugo ; Martins, Rodrigo. / Nanocrystalline thin film silicon solar cells : A deeper look into p/i interface formation. In: THIN SOLID FILMS. 2015 ; Vol. 591, No. Part A. pp. 25-31.
@article{13e482a5fec3451f94091845212aae55,
title = "Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formation",
abstract = "The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions.",
keywords = "Buffer layer, Ion bombardment, Nanocrystalline silicon, p/i interface, Thin film solar cells",
author = "Andriy Lyubchyk and Filonovich, {Sergej Alexandrovich} and Tiago Mateus and Mendes, {Manuel Jo{\~a}o} and Ant{\'o}nio Vicente and Leit{\~a}o, {Joaquim Pratas} and Falc{\~a}o, {Bruno Po{\cc}as} and Elvira Fortunato and Hugo {\'A}guas and Rodrigo Martins",
note = "Sem PDF. The authors acknowledge for the financial support, under project {"}Si-QuaDot{"} PTDC/CTM-ENE/2514/2012 from the Portuguese Fundacao para a Ciencia e a Tecnologia (FCT-MEC), Strategic Project UID/CTM/50025/2013 and RECI/FIS-NAN/0183/2012 (COMPETE: FCOMP-01-0124-FEDER-027494). S. A. Filonovich acknowledges the support from FCT-MEC through the post-doc scholarship SFRH/BPD/91281/2012. M. J. Mendes acknowledges funding by the EU Marie Curie Action FP7-PEOPLE-2013-IEF through the DIELECTRIC PV project (Grant No. 629370). A. Vicente acknowledges the support from FCT and MIT-Portugal program through the scholarship SFRH/BD/33978/2009.",
year = "2015",
month = "9",
day = "30",
doi = "10.1016/j.tsf.2015.08.016",
language = "English",
volume = "591",
pages = "25--31",
journal = "THIN SOLID FILMS",
issn = "0040-6090",
publisher = "Elsevier B.V.",
number = "Part A",

}

Nanocrystalline thin film silicon solar cells : A deeper look into p/i interface formation. / Lyubchyk, Andriy ; Filonovich, Sergej Alexandrovich; Mateus, Tiago; Mendes, Manuel João; Vicente, António; Leitão, Joaquim Pratas; Falcão, Bruno Poças; Fortunato, Elvira; Águas, Hugo; Martins, Rodrigo.

In: THIN SOLID FILMS, Vol. 591, No. Part A, 30.09.2015, p. 25-31.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nanocrystalline thin film silicon solar cells

T2 - A deeper look into p/i interface formation

AU - Lyubchyk, Andriy

AU - Filonovich, Sergej Alexandrovich

AU - Mateus, Tiago

AU - Mendes, Manuel João

AU - Vicente, António

AU - Leitão, Joaquim Pratas

AU - Falcão, Bruno Poças

AU - Fortunato, Elvira

AU - Águas, Hugo

AU - Martins, Rodrigo

N1 - Sem PDF. The authors acknowledge for the financial support, under project "Si-QuaDot" PTDC/CTM-ENE/2514/2012 from the Portuguese Fundacao para a Ciencia e a Tecnologia (FCT-MEC), Strategic Project UID/CTM/50025/2013 and RECI/FIS-NAN/0183/2012 (COMPETE: FCOMP-01-0124-FEDER-027494). S. A. Filonovich acknowledges the support from FCT-MEC through the post-doc scholarship SFRH/BPD/91281/2012. M. J. Mendes acknowledges funding by the EU Marie Curie Action FP7-PEOPLE-2013-IEF through the DIELECTRIC PV project (Grant No. 629370). A. Vicente acknowledges the support from FCT and MIT-Portugal program through the scholarship SFRH/BD/33978/2009.

PY - 2015/9/30

Y1 - 2015/9/30

N2 - The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions.

AB - The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions.

KW - Buffer layer

KW - Ion bombardment

KW - Nanocrystalline silicon

KW - p/i interface

KW - Thin film solar cells

UR - http://www.scopus.com/inward/record.url?scp=84942037268&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.08.016

DO - 10.1016/j.tsf.2015.08.016

M3 - Article

VL - 591

SP - 25

EP - 31

JO - THIN SOLID FILMS

JF - THIN SOLID FILMS

SN - 0040-6090

IS - Part A

ER -