Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique

Isabel Maria Mercês Ferreira; Francisco Manuel Braz Fernandes; Paula Vilarinho; Elvira Maria Correia Fortunato; Rodrigo Ferrão de Paiva Martins

doi:10.1016/S0928-4931(01)00249-1

Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique

Isabel Maria Mercês Ferreira, Francisco Manuel Braz Fernandes, Paula Vilarinho, Elvira Maria Correia Fortunato, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H-2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics.

Original language	English
Pages (from-to)	137-140
Number of pages	4
Journal	MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
Volume	15
Issue number	1-2
DOIs	https://doi.org/10.1016/S0928-4931(01)00249-1
Publication status	Published - 20 Aug 2001

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title = "Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique",

abstract = "We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H-2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics.",

keywords = "hot wire plasma assisted, p-type films, nanocrystalline silicon",

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doi = "10.1016/S0928-4931(01)00249-1",

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T1 - Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique

AU - Ferreira, Isabel Maria Mercês

AU - Braz Fernandes, Francisco Manuel

AU - Vilarinho, Paula

AU - Fortunato, Elvira Maria Correia

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2001/8/20

Y1 - 2001/8/20

N2 - We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H-2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics.

AB - We report in this paper the influence of the rf power on the properties of p-type silicon thin films produced by hot wire plasma assisted chemical vapor deposition (HWPA-CVD) technique, using a gas mixture containing SiH4, B2H6, CH4 and H-2. The influence of the rf power in the film morphology, its structure and its composition has been determined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and infrared spectroscopy. The electrical dark conductivity, activation energy, optical band gap and growth rate values for the different rf power was also evaluated. The data achieved show that rf power rules the surface morphology, the film structure and its electrical characteristics.

KW - hot wire plasma assisted

KW - p-type films

KW - nanocrystalline silicon

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DO - 10.1016/S0928-4931(01)00249-1

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JO - MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS

JF - MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS

IS - 1-2

ER -

Nanocrystalline p-type silicon films produced by hot wire plasma assisted technique

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