Nanocrystalline p-layer for a-Si:H p–i–n solar cells and photodiodes

TY - JOUR

T1 - Nanocrystalline p-layer for a-Si:H p–i–n solar cells and photodiodes

AU - DEE Group Author

AU - Vieira, Maria Manuela de Almeida Carvalho

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p+ nc-Si:H as a window layer, complete p–i–n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

AB - We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p+ nc-Si:H as a window layer, complete p–i–n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

U2 - 10.1016/j.solmat.2010.06.044

DO - 10.1016/j.solmat.2010.06.044

M3 - Article

VL - 94

SP - 1860

EP - 1863

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 11

ER -