We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p+ nc-Si:H as a window layer, complete p–i–n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
DEE Group Author, & Vieira, M. M. D. A. C. (2010). Nanocrystalline p-layer for a-Si:H p–i–n solar cells and photodiodes. Solar Energy Materials and Solar Cells, 94(11), 1860-1863. https://doi.org/10.1016/j.solmat.2010.06.044