Nanocrystalline p-layer for a-Si:H p–i–n solar cells and photodiodes

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We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 °C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p+ nc-Si:H as a window layer, complete p–i–n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.
Original languageUnknown
Pages (from-to)1860-1863
JournalSolar Energy Materials and Solar Cells
Issue number11
Publication statusPublished - 1 Jan 2010

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