N-type oxide semiconductor thin-film transistors

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	Unknown
Title of host publication	Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices
Editors	S.J. Pearton
Place of Publication	New York
Publisher	Springer
Pages	435-476
ISBN (Print)	978-3-642-23520-7
Publication status	Published - 1 Jan 2012

Name	Springer series in materials science
Publisher	Springer

Access to Document

@inbook{dc811429708a4e528b15d66e75021433,

title = "N-type oxide semiconductor thin-film transistors",

author = "Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Fortunato, {Elvira Maria Correia}",

year = "2012",

month = jan,

day = "1",

language = "Unknown",

isbn = "978-3-642-23520-7",

series = "Springer series in materials science",

publisher = "Springer",

pages = "435--476",

editor = "S.J. Pearton",

booktitle = "Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices",

address = "Netherlands",

}

N-type oxide semiconductor thin-film transistors. / Barquinha, Pedro Miguel Cândido ; Martins, Rodrigo Ferrão de Paiva ; Fortunato, Elvira Maria Correia.
Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices. ed. / S.J. Pearton. New York: Springer, 2012. p. 435-476 (Springer series in materials science).

Research output: Chapter in Book/Report/Conference proceeding › Chapter

TY - CHAP

T1 - N-type oxide semiconductor thin-film transistors

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

AU - Fortunato, Elvira Maria Correia

PY - 2012/1/1

Y1 - 2012/1/1

M3 - Chapter

SN - 978-3-642-23520-7

T3 - Springer series in materials science

SP - 435

EP - 476

BT - Advances in GaN and ZnO-based Thin Film, Bulk and Nanostructured Materials and Devices

A2 - Pearton, S.J.

PB - Springer

CY - New York

ER -