TY - JOUR
T1 - Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices
AU - Fortunato, Elvira Maria Correia
AU - Gonçalves, Alexandra
AU - Marques, António
AU - Pimentel, Ana Cláudia Madeira Botas Gomes
AU - Barquinha, Pedro Miguel Cândido
AU - Aguas, Hugo
AU - Pereira, Luis Miguel Nunes
AU - Raniero, Leandro
AU - Gonçalves, Gonçalo
AU - Ferreira, Isabel
AU - Martins, Rodrigo Ferrão de Paiva
PY - 2006
Y1 - 2006
N2 - In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.
AB - In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.
KW - ZnO thin films;
KW - ransparent conductive oxides
KW - UV/ ozone sensors
KW - f magnetron sputtering.
U2 - 10.4028/www.scientific.net/MSF.514-516.3
DO - 10.4028/www.scientific.net/MSF.514-516.3
M3 - Article
SN - 0255-5476
VL - 514-516
SP - 3
EP - 7
JO - Materials Science Forum
JF - Materials Science Forum
ER -