Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Jonas Deuermeier; Asal Kiazadeh; Andreas Klein; Rodrigo Martins; Elvira Fortunato

doi:10.3390/nano9020289

Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Jonas Deuermeier, Asal Kiazadeh, Andreas Klein, Rodrigo Martins, Elvira Fortunato

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Abstract

Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

Original language	English
Article number	289
Journal	Nanomaterials
Volume	9
Issue number	2
DOIs	https://doi.org/10.3390/nano9020289
Publication status	Published - 19 Feb 2019

Keywords

resistive switching memories
multi-level cell
copper oxide
grain boundaries
aluminum oxide

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10.3390/nano9020289Licence: CC BY

multi-level cell propertiesFinal published version, 3.19 MBLicence: CC BY

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title = "Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device",

abstract = "Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.",

keywords = "resistive switching memories, multi-level cell, copper oxide, grain boundaries, aluminum oxide",

author = "Jonas Deuermeier and Asal Kiazadeh and Andreas Klein and Rodrigo Martins and Elvira Fortunato",

note = "info:eu-repo/grantAgreement/FCT/5876/147333/PT\# This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).",

year = "2019",

month = feb,

day = "19",

doi = "10.3390/nano9020289",

language = "English",

volume = "9",

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T1 - Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

AU - Deuermeier, Jonas

AU - Kiazadeh, Asal

AU - Klein, Andreas

AU - Martins, Rodrigo

AU - Fortunato, Elvira

N1 - info:eu-repo/grantAgreement/FCT/5876/147333/PT# This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).

PY - 2019/2/19

Y1 - 2019/2/19

N2 - Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

AB - Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

KW - resistive switching memories

KW - multi-level cell

KW - copper oxide

KW - grain boundaries

KW - aluminum oxide

U2 - 10.3390/nano9020289

DO - 10.3390/nano9020289

M3 - Article

C2 - 30791401

SN - 2079-4991

VL - 9

JO - Nanomaterials

JF - Nanomaterials

IS - 2

M1 - 289

ER -

Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Abstract

Keywords

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