Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

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Abstract

Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

Original languageEnglish
Article number289
JournalNanomaterials
Volume9
Issue number2
DOIs
Publication statusPublished - 19 Feb 2019

Keywords

  • resistive switching memories
  • multi-level cell
  • copper oxide
  • grain boundaries
  • aluminum oxide

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