Abstract

This paper presents a novel mostly passive ∆-Σ ADC using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). The ADC circuit consists of passive elements (resistors and capacitors), a novel dynamic comparator, a D-Flip Flop and a pseudo-CMOS BS inverter. In-house oxide TFT model is used for circuit simulations in Cadence environment. The proposed ADC results in effective-number-of-bits (ENOB) of 11.2 bits and a figure-of-merit (FOM) of 0.15 µJ/conversion step at 2 kHz sampling frequency with a 10 V power supply. This circuit would find potential applications in biomedical wearable systems, in which, the ADC is probably the most important block.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
Place of PublicationNew York, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-6
Number of pages6
ISBN (Print)978-1-7281-9201-7
DOIs
Publication statusPublished - 2021
Event53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of
Duration: 22 May 202128 May 2021

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2021-May
ISSN (Print)0271-4310

Conference

Conference53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
Country/TerritoryKorea, Republic of
CityDaegu
Period22/05/2128/05/21

Keywords

  • Delta-Sigma ADC
  • a-IGZO TFTs
  • Dynamic Comparator
  • D-Flip Flop
  • Pseudo-CMOS BS Inverter

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